Related papers: Mid-infrared intraband transitions in InAs colloid…
The rapidly developing quantum communication technology requires deterministic quantum emitters that can generate single photons and entangled photon pairs in the third telecom window, in order to be compatible with existing optical fiber…
Deep-level transient spectroscopy and temperature-dependent time-resolved photoluminescence experiments are performed on identical InAs nBn photodetector structures as a function of in-situ and ex-situ 63 MeV proton irradiation to assess…
We show that mid infrared transmission spectroscopy of a quantum cascade laser provides clear cut information on changes in charge location at different bias. Theoretical simulations of the evolution of the gain/absorption spectrum for the…
Two ultracompact H II regions (IRAS 19181+1349 and 20178+4046) and one compact molecular clump (20286+4105) have been observed at far infrared wavelengths using the TIFR 1 m balloon-borne telescope and at mid infrared wavelengths using ISO.…
Semiconductor doped glasses had been used by the research and engineering communities as color filters or saturable absorbers well before it was realized that their optical properties were defined by tiny specs of semiconductor matter known…
Mid-infrared dual-comb spectroscopy has the potential to supplant conventional high-resolution Fourier transform spectroscopy in applications that require high resolution, accuracy, signal-to-noise ratio, and speed. Until now, dual-comb…
Although van der Waals (vdW) layered MoS2 shows the phase transformation from the semiconducting 2H-phase to the metallic 1T-phase through chemical lithium intercalation, vdW MoTe2 is thermodynamically reversible between the 2H- and…
Indium phosphide is the leading material for commercial applications of colloidal quantum dots. To date, however, the community has failed to achieve successful operation under strong excitation conditions, contrasting sharply with other…
The influences of Si sheet doping levels on the properties of InAs/GaAs quantum dots (QDs) are investigated by atomic force microscopy (AFM) and photoluminescence (PL). AFM measurements reveal that Si sheet doping doesn't change the…
Observations at mid-infrared (4.8-17.65 um) and radio (0.7-1.3 cm) wavelengths are used to constrain the structure of the high-mass star-forming region W3 IRS5 on 0.1'' (200 AU) scales. Two bright mid-infrared sources are detected, as well…
To generate entangled photon pairs via quantum dots (QDs), the exciton fine structure splitting (FSS) must be comparable to the exciton homogeneous line width. Yet in the (In,Ga)As/GaAs QD, the intrinsic FSS is about a few tens $\mu$eV. To…
Phase transition materials are promising for realization of switchable optics. In this work, we show reflectance resonances in the near-infrared and long-wave infrared wavelengths in highly subwavelength partially oxidized Vanadium thin…
The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spectroscopy. Observed resonances can be attributed to p-shell…
The separation dependence of the interaction between two resonant groups of CdSe/ZnS nanocrystallite quantum dots is studied at room temperature. A near-field scanning optical microscope is used to bring a group of mono-disperse ~6.5 nm…
We investigate quantum spectroscopy with undetected photons for protein detection in the mid-infrared spectral region. Classical Fourier-transform infrared spectroscopy of protein samples (bovine serum albumin and N-terminal pro-brain…
Unique optical properties of colloidal semiconductor quantum dots (QDs), arising from quantum mechanical confinement of charge within these structures, present a versatile testbed for the study of how high electric fields affect the…
We use an $sp^3d^5s^* $ tight-binding model to investigate the electronic and optical properties of realistic site-controlled (111)-oriented InGaAs/GaAs quantum dots. Special attention is paid to the impact of random alloy fluctuations on…
Semiconductor quantum photonic circuits can be used to efficiently generate, manipulate, route and exploit non-classical states of light for distributed photon based quantum information technologies. In this article, we review our recent…
Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 $\mu$m wavelength window with picosecond response…
We have fabricated electric double-layer field-effect devices to electrostatically dope our active materials, either $x$=0.015 Ga$_{1-x}$Mn$_x$As or $x$=3.2$\times10^{-4}$ Ga$_{1-x}$Be$_x$As. The devices are tailored for interrogation of…