Related papers: Modeling and Optimization of Two-Terminal Spin-Orb…
Current-driven switching of nonvolatile spintronic materials and devices based on spin-orbit torques offer fast data processing speed, low power consumption, and unlimited endurance for future information processing applications. Analogous…
Efficient generation of spin-orbit torques (SOTs) is central for the exciting field of spin-orbitronics. Platinum, the archetypal spin Hall material, has the potential to be an outstanding provider for spin-orbit torques due to its giant…
Magnetic random-access memory (MRAM) driven by spin-transfer torque (STT) is a major contender for future memory applications. The energy dissipation involved in writing remains problematic, even with the advent of more efficient…
Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical…
MXenes have attracted considerable attention in recent years owing to their two-dimensional (2D) layered structures with various functionalities similar to those of graphene and transition metal dichalcogenides. To open a new application…
Future applications of spin-orbit torque will require new mechanisms to improve the efficiency for switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast, nanosecond scale…
The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape…
This paper introduces the concept of spin-orbit-torque-MRAM (SOT-MRAM) based physical unclonable function (PUF). The secret of the PUF is stored into a random state of a matrix of perpendicular SOT-MRAMs. Here, we show experimentally and…
The computing wall and data movement challenges of deep neural networks (DNNs) have exposed the limitations of conventional CMOS-based DNN accelerators. Furthermore, the deep structure and large model size will make DNNs prohibitive to…
The emergent two-dimensional (2D) ferromagnetic materials with unique magnetic properties have endowed great potential for next-generation spintronic devices with extraordinary merits of high flexibility, easy controllability, and high…
Current-induced spin-orbit torque (SOT) has emerged as a promising method for achieving energy-efficient magnetization switching in advanced spintronic devices. However, technological advancement has been inadequate because an external…
Memory devices operating due to the fast proton transfer (PT) process are proposed by means of the first-principles calculations. Writing an information is performed using the electrostatic potential of the scanning tunneling microscopy…
Spin-orbit torque (SOT)-based perpendicularly magnetized memory devices with multistate memory have garnered significant interest due to their applicability in low-power in-memory analog computing. However, current methods are hindered by…
Heavy metals with strong spin-orbit coupling (SOC) have been employed to generate spin current to control the magnetization dynamics by spin-orbit torque (SOT). Magnetic tunnel junction based on SOT (SOT-MTJ) is a promising application with…
We propose an analog implementation of the transcendental activation function leveraging two spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and a CMOS inverter. The proposed analog neuron circuit consumes 1.8-27x…
The excellent performance of modern deep neural networks (DNNs) comes at an often prohibitive training cost, limiting the rapid development of DNN innovations and raising various environmental concerns. To reduce the dominant data movement…
Topological insulators (TI) and magnetic topological insulators (MTI) can apply highly efficient spin-orbit torque (SOT) and manipulate the magnetization with their unique topological surface states with ultra-high efficiency. Here, we…
Materials with spin-orbit coupling are of great interest for various spintronics applications due to the efficient electrical generation and detection of spin-polarized electrons. Over the past decade, many materials have been studied,…
Electrically controllable non-volatile magnetic memories show great potential for the replacement of semiconductor-based technologies. Recently there has been strong interest in spin-orbit torque (SOT) induced magnetization reversal due to…
It is crucial that magnetic memory devices formed from magnetic heterostructures possess sizable spin-orbit torque (SOT) efficiency and high thermal stability to realize both efficient SOT control and robust storage of such memory devices.…