Related papers: High Pressure and Compositionally Directed Route t…
The compounds Lu$_5$Ir$_4$Si$_{10}$ and Lu$_5$Ir$_4$Ge$_{10}$ crystallize in the tetragonal Sc$_5$Co$_4$Si$_{10}$ type structure. Lu$_5$Ir$_4$Si$_{10}$ is known to superconduct below 3.9 K and it also exhibits a strongly coupled charge…
The electronic, magnetic, thermoelectric, and topological properties of Heusler compounds (composition $XYZ$ or $X_2 YZ$) are highly sensitive to stoichiometry and defects. Here we establish the existence and experimentally map the bounds…
Silicon exhibits several metastable allotropes which recently attracted attention in the quest for materials with superior (e.g. optical) properties, compatible with Si technology. In this work we shed light on the atomic-scale mechanisms…
The enhancement of the spin-space symmetry from the usual $\mathrm{SU}(2)$ to $\mathrm{SU}(N)$ with $N>2$ is promising for finding nontrivial quantum spin liquids, but the realization of $\mathrm{SU}(N)$ spin systems in real materials is…
We present our findings of a large-scale screening for new synthesizable materials in five M-Sn binaries, M = Na, Ca, Cu, Pd, and Ag. The focus on these systems was motivated by the known richness of M-Sn properties with potential…
The electron and phonon spectra, as well as the density of electron and phonon states of the stable orthorhombic structure of hydrogen sulfide (SH2) at pressures 100-180 GPa have been calculated. It is found that the set of parallel planes…
Hexagonal boron nitride (hBN) has been grown on sapphire substrates by ultra-high temperature molecular beam epitaxy (MBE). A wide range of substrate temperatures and boron fluxes have been explored, revealing that high crystalline quality…
Hexagonal boron nitride is a wide bandgap semiconductor with a very high thermal and chemical stability often used in devices operating under extreme conditions. The growth of high-purity crystals has recently revealed the potential of this…
The Mg2X (X=Si, Ge, Sn) based alloy is an eco-friendly thermoelectric material for mid-temperature applications. The Mg2Si1-xSnx and Mg2Ge1-xSnx alloys can be phase-separated into Si(Ge)- and Sn-rich phases during material synthesis,…
A15 Nb$_3$Si is, until now, the only high temperature superconductor produced at high pressure (~110 GPa) that has been successfully brought back to room pressure conditions in a metastable condition. Based on the current great interest in…
We report results of systematic measurements of charge transport properties of the 20.5nm wide HgTe-based quantum well in perpendicular magnetic field, performed under hydrostatic pressures up to 15.1 kbar. At ambient pressure transport is…
GaN based high electron mobility transistors show promise in numerous device applications which elicits the need for accurate models of bulk, surface, and interface electronic properties. We detail here a hybrid density functional theory…
Under pressure, metals exhibit increasingly shorter interatomic distances. Intuitively, this response is expected to be accompanied by an increase in the widths of the valence and conduction bands and hence a more pronounced…
The deposition of nano-crystalline ZnS/diamond composite protective coatings on silicon, sapphire, and ZnS substrates, as a preliminary step to coating infrared transparent ZnS substrates from powder mixtures by the aerosol deposition…
Germanium-Tin (GeSn) alloys have emerged as a promising material for future optoelectronics, energy harvesting and nanoelectronics owing to their direct bandgap and compatibility with existing Si-based electronics. Yet, their metastability…
At high pressure, the typical behavior of elements dictated by the periodic table - including oxidation numbers, stoichiometries in compounds, and reactivity, to name but a few - is altered dramatically. As pressure is applied, the…
A series of new Cr$_{5+x}$Mo$_{35-x}$W$_{12}$Re$_{35}$Ru$_{13}$C$_{20}$ high-entropy alloys (HEAs) have been synthesized and characterized by x-ray diffraction, scanning electron microscopy, electrical resistivity, magnetic susceptibility…
Herein, we report on the improvement of structural quality and enhancement of photoluminescence (PL) emission for an optimally N doped nanocrystalline diamond (NCD) film. Pure and N doped nanocrystalline diamond films are synthesized on Si…
We have synthesized an orthorhombic phase of nickel and silicon doped Fe$_{7}$C$_{3}$ at high-pressure and high temperature using a laser-heated diamond anvil cell. The synthesized material is characterized using X-ray diffraction (XRD),…
We propose a (three-dimension) -> (one-dimension) shift of paradigm for basic understanding of Raman spectra of random Si-Ge. Fair contour modeling of Raman spectra is achieved along the linear chain approximation via 1D-cluster version of…