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Optically addressable spin defects in wide-bandgap semiconductors are promising building blocks for quantum sensing and quantum networks. Establishing their atomic structure is essential for understanding functionality and enabling…
Defects in silicon carbide (SiC) have emerged as a favorable platform for optically-active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide…
Defects in silicon carbide are of intense and increasing interest for quantum-based applications due to this material's properties and technological maturity. We calculate the multi-particle symmetry adapted wave functions of the negatively…
Divacancy defects in silicon carbide have long-lived electronic spin states and sharp optical transitions, with properties that are similar to the nitrogen-vacancy defect in diamond. We report experiments on 4H-SiC that investigate…
The controlled generation and manipulation of atom-like defects in solids has a wide range of applications in quantum technology. Although various defect centres have displayed promise as either quantum sensors, single photon emitters or…
Identification of microscopic configuration of point defects acting as quantum bits is a key step in the advance of quantum information processing and sensing. Among the numerous candidates, silicon vacancy related centers in silicon…
The negatively charged silicon vacancy [V$_\text{Si}(-)$] in silicon carbide (SiC) is a paramagnetic and optically active defect in hexagonal SiC. V$_\text{Si}(-)$ defect possesses $S = 3/2$ spin with long spin coherence time and can be…
Recently, vacancy-related spin defects in silicon carbide (SiC) have been demonstrated to be potentially suitable for versatile quantum interface building and scalable quantum network construction. Significant efforts have been undertaken…
Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication, they promise scalable high-efficiency spin-photon…
Spin defects in silicon carbide (SiC) with mature wafer-scale fabrication and micro/nano-processing technologies have recently drawn considerable attention. Although room temperature single-spin manipulation of colour centres in SiC has…
We discovered uniaxial oriented centers in silicon carbide having unusual performance. Here we demonstrate that the family of silicon-vacancy related centers with $S= 3/2$ in rhombic 15R-SiC crystalline matrix possess unique characteristics…
Silicon carbide (SiC) has attracted significant attention as a promising quantum material due to its ability to host long-lived, optically addressable color centers with solid-state photonic interfaces. The CMOS compatibility of 4H-SiCOI…
Color centers in silicon carbide (SiC) have demonstrated significant promise for quantum information processing. However, the undesirable ionization process that occurs during optical manipulation frequently causes fluctuations in the…
The long-lived and optically addressable spin states of silicon vacancies ($\mathrm{V}_\mathrm{Si}$) in 4H-SiC make them promising qubits for quantum communication and sensing. These color centers can be created in both the hexagonal (V1)…
The silicon monovacancy in 4H-SiC is a promising candidate for solid-state quantum information processing. We perform high-resolution optical spectroscopy on single V2 defects at cryogenic temperatures. We find favorable low temperature…
Understanding the optical properties of color centers in silicon carbide is essential for their use in quantum technologies, such as single-photon emission and spin-based qubits. In this work, first-principles calculations were employed…
4H-silicon carbide is a promising platform for solid-state quantum technology due to its commercial availability as a wide bandgap semiconductor and ability to host numerous spin-active color centers. Integrating color centers into…
Spin defects in silicon carbide (SiC) have attracted increasing interest due to their excellent optical and spin properties, which are useful in quantum information processing. In this paper, we systematically investigate the temperature…
Point defects in silicon carbide (SiC), particularly the negatively-charged silicon vacancy ($\mathrm{V_{Si}^{-}}$) in 4H-SiC, are leading candidates for scalable quantum technologies due to their favorable spin-optical properties and…
The PL6 color center in 4H-SiC, known for its excellent ambient-temperature spin and optical properties, has an unresolved microscopic origin. In this first-principles study, we systematically investigate potential structures to clarify its…