Related papers: Protected valley splitting against interface disor…
Accurate and efficient implementation of parallel quantum gates is crucial for scalable quantum information processing. However, the unavoidable crosstalk between qubits in current noisy processors impedes the achievement of high gate…
Qubits encoded in a decoherence-free subsystem and realized in exchange-coupled silicon quantum dots are promising candidates for fault-tolerant quantum computing. Benefits of this approach include excellent coherence, low control…
In quantum information processing, a tension between two different tasks occurs: while qubits' states can be preserved by isolating them, quantum gates can be realized only through qubit-qubit interactions. In arrays of qubits, weak…
Shuttling of single electrons in gate-defined silicon quantum dots is numerically simulated. A minimal gate geometry without explicit tunnel barrier gates is introduced, and used to define a chain of accumulation mode quantum dots, each…
Spin qubits in silicon quantum dots are one of the most promising building blocks for large scale quantum computers thanks to their high qubit density and compatibility with the existing semiconductor technologies. High fidelity…
In principle a 1D array of nearest-neighbour linked qubits is compatible with fault tolerant quantum computing. However such a restricted topology necessitates a large overhead for shuffling qubits and consequently the fault tolerance…
Semiconductor quantum dots have shown impressive breakthroughs in the last years, with single and two qubit gate fidelities matching other leading platforms and scalability still remaining a relative strength. However, due to qubit wiring…
Coherent control and manipulation of quantum degrees of freedom such as spins forms the basis of emerging quantum technologies. In this context, the robust valley degree of freedom and the associated valley pseudospin found in…
Spin qubit shuttling via moving conveyor-mode quantum dots in Si/SiGe offers a promising route to scalable miniaturized quantum computing. Recent modeling of dephasing via valley degrees of freedom and well disorder dictate a slow shutting…
The interplay of massive electrons with spin-orbit coupling in bulk graphene results in a spin-valley dependent gap. Thus, a barrier with such properties can act as a filter, transmitting only opposite spins from opposite valleys. In this…
Due to inhomogeneous broadening, the absorption lines of rare-earth-ion dopands in crystals are many order of magnitudes wider than the homogeneous linewidths. Several ways have been proposed to use ions with different inhomogeneous shifts…
Mobile spin qubit architectures promise flexible connectivity for efficient quantum error correction and relaxed device layout constraints, but their viability rests on preserving spin coherence during transport. While shuttling transforms…
We develop the theory of single-electron silicon spin qubit relaxation in the presence of a magnetic field gradient. Such field gradients are routinely generated by on-chip micromagnets to allow for electrically controlled quantum gates on…
We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We…
We propose a highly efficient silicene device for dual spin and valley filtering. The device consists of two different barrier regions: the first is a region under uniaxial strain, with an exchange field induced by adjacent top and bottom…
As an emerging magnetic phase, altermagnets (AMs) with collinear compensated magnetism in real space and alternating spin splitting in the band structure have attracted widespread attention. Here, based on first-principles calculations, we…
With any roughness at the interface of an indirect-bandgap semiconducting dot, the phase of the valley-orbit coupling can take on a random value. This random value, in double quantum dots, causes a large change in the exchange splitting. We…
Understanding strongly interacting electrons enables the design of materials, nanostructures and devices. Developing this understanding relies on the ability to tune and control electron-electron interactions by, e.g., confining electrons…
The valley degree of freedom presents challenges and opportunities for silicon spin qubits. An important consideration for singlet-triplet states is the presence of two distinct triplets, comprised of valley vs. orbital excitations. Here we…
Complementary metal-oxide semiconductor (CMOS) technology has radically reshaped the world by taking humanity to the digital age. Cramming more transistors into the same physical space has enabled an exponential increase in computational…