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Ferrimagnetic Mn$_4$N is a promising material for heat flux sensors based on the anomalous Nernst effect (ANE) because of its sizable uniaxial magnetic anisotropy ($K_{\rm u}$) and low saturation magnetization ($M_{\rm s}$). We…

Materials Science · Physics 2021-05-18 Shinji Isogami , Keisuke Masuda , Yoshio Miura , Rajamanickam Nagalingam , Yuya Sakuraba

The anomalous Nernst effect (ANE), a heat-charge conversion mechanism based on a magnetic metal, has been extensively studied for application in thin thermoelectric devices. The low magnetization and fabrication at room temperature are…

Materials Science · Physics 2021-07-21 Yuichiro Kurokawa , Masahiro Fujimoto , Yuki Hamada , Hiromi Yuasa

The anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) are the transverse transport phenomena in magnetic materials, which reflect the Berry curvature arising from the electronic structure near the Fermi level. Lattice strain…

Mn$_{3-x}$Ga (x = 0.1, 0.4, 0.7) thin films on MgO and SrTiO$_3$ substrates were investigated with magnetic anisotropy perpendicular to the film plane. An anomalous Hall-effect was observed for the tetragonal distorted lattice in the…

Materials Science · Physics 2015-06-12 Manuel Glas , Daniel Ebke , Inga-Mareen Imort , Patrick Thomas , Günter Reiss

We conducted a comprehensive study on the compositional dependence of the anomalous Nernst effect (ANE) in amorphous (amo.) Tb-Fe-Co thin films. The anomalous Nernst coefficient strongly depends not only on the Tb composition but also on…

Materials Science · Physics 2025-12-22 Hiroto Imaeda , Tsunehiro Takeuchi , Hiroyuki Awano , Kenji Tanabe

Investigating the thermoelectric properties of ferromagnets is important for the development of future microelectronic devices for efficient energy conversion purposes. Ferromagnetic Mn$_5$Ge$_3$C$_x$ thin films with a Curie temperature up…

Materials Science · Physics 2024-02-08 R. Kraft , S. Srichandan , G. Fischer , C. Sürgers

The anomaly in the anomalous Nernst effect (ANE) was observed for a C1b-type NiMnSb half-Heusler alloy thin film deposited on a MgO (001) substrate. The Nernst angle ({\theta}ANE) showed maximum peak with decreasing temperature and reached…

Mesoscale and Nanoscale Physics · Physics 2019-02-20 Himanshu Sharma , Zhenchao Wen , Koki Takanashi , Masaki Mizuguchi

Synthesis of crystallographically well-defined thin films of topological materials is important for unraveling their mesoscale quantum properties and for device applications. Mn$_3$Ge, an antiferromagnetic Weyl semimetal with a chiral…

Ferrimagnetic Mn$_2$Fe$_x$Ga $(0.26 \leq x \leq 1.12)$ thin films have been characterised by X-ray diffraction, SQUID magnetometry, X-ray absorption spectroscopy, X-ray magnetic circular dichroism and M\"{o}ssbauer spectroscopy with the aim…

The observation of a sizable anomalous Hall effect in magnetic materials with vanishing magnetization has renewed interest in understanding and engineering this phenomenon. Antiferromagnetic antiperovskites are one of emerging material…

SiO2/Fe/SiO2 sandwich structure films fabricated by sputtering were studied by varying the Fe layer thickness (t_Fe). The structural and microstructural studies on the samples showed that the Fe layer has grown in nanocrystalline form with…

Materials Science · Physics 2026-01-19 Sudhansu Sekhar Das , M. Senthil Kumar

Antiferromagnets with tunable phase transitions are promising for future spintronics applications. We investigated spin-dependent transport properties of FeRh thin films, which show a temperature driven antiferromagnetic-to-ferromagnetic…

Noncollinear antiferromagnets have recently been attracting considerable interest partly due to recent surprising discoveries of the anomalous Hall effect (AHE) in them and partly because they have promising applications in…

Materials Science · Physics 2019-10-22 Guang-Yu Guo , Tzu-Cheng Wang

The Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction.…

Mesoscale and Nanoscale Physics · Physics 2008-09-12 Yong Pu , Daichi Chiba , Fumihiro Matsukura , Hideo Ohno , Jing Shi

We report the planar and anomalous Nernst effect in epitaxial thin films of spin polarized La2/3Sr1/3MnO3. The thermal counterpart of the anomalous Hall effect in this material (i.e. the anomalous Nernst effect) shows a extreme sensitivity…

Materials Science · Physics 2014-06-03 Cong Tinh Bui , Francisco Rivadulla

The transverse thermoelectric effect enables simpler, more flexible thermoelectric devices by generating electricity perpendicular to heat flow, offering promising solutions for waste heat recovery and solid-state cooling applications.…

Strongly Correlated Electrons · Physics 2025-08-12 Yazhou Li , Jiaxing Liao , Jiajun Ma , Yuwei Zhang , Tao Li , Jialu Wang , Hangdong Wang , Hanjie Guo , Jianhui Dai , Yuke Li

The topological kagome magnet (TKM) Fe3Sn2 exhibits unusual topological properties, flat electronic bands, and chiral spin textures, making it an exquisite materials platform to explore the interplay between topological band structure,…

Antiferromagnetic Mn$_{3}$Ge with a non-collinear Kagome structures present exciting prospects for exploring Berry curvature driven anomalous Hall effects (AHE). Despite substantial progress in bulk systems, the synthesis of crystalline…

Mesoscale and Nanoscale Physics · Physics 2025-02-05 Indraneel Sinha , Purba Dutta , Nazma Firdosh , Shreyashi Sinha , Nirmal Ganguli , Sujit Manna

We have studied the anomalous Hall effect (AHE) in strained thin films of the frustrated antiferromagnet Mn$_{3}$NiN. The AHE does not follow the conventional relationships with magnetization or longitudinal conductivity and is enhanced…

Strongly Correlated Electrons · Physics 2019-10-02 David Boldrin , Ilias Samathrakis , Jan Zemen , Andrei Mihai , Bin Zou , Bryan Esser , Dave McComb , Peter Petrov , Hongbin Zhang , Lesley F. Cohen

The anomalous Nernst effect in nanostructured magnetic materials is a key phenomenon to optimally control and employ the internal energy dissipated in electronic devices, being dependent on for instance the magnetic anisotropy of the active…

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