Related papers: Microwave-acoustic-based isolated gate driver for …
We investigate the dependence of photonic waveguide propagation loss on the thickness of the buried oxide layer in Y-cut lithium niobate on insulator substrate to identify trade-offs between optical losses and electromechanical coupling of…
We report on MoSi-based superconducting nanowire single-photon detectors on a gallium arsenide substrate. MoSi deposited on a passivated GaAs surface has the same critical temperature as MoSi deposited on silicon. The critical temperature…
We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmon-like device ("gatemon") is controlled by an electrostatic gate that depletes carriers in a…
Superconducting quantum circuits are typically operated at low temperatures (mK), necessitating cryogenic low-noise, wide-band amplifiers for signal readout ultimately also compatible with room temperature electronics. While existing…
This work presents a novel Gallium nitride (GaN) high-electron-mobility transistor (HEMT) based ultraviolet photodetector architecture integrating advanced material and structural design strategies to enhance detection performance and…
While functional materials with both light transmitting and electromagnetic shielding are highly desirable, only very few of them meet the stringent electromagnetic interference (EMI) shielding criteria for optoelectronic systems. Here, a…
High bias electrical transport characteristics of freely suspended metallic single-walled carbon nanotubes (SWNTs) are investigated at 250-400K in vacuum and various gases. Self-heating is exploited to examine the temperature dependence of…
We demonstrate that the superconducting critical temperature (Tc) of thin niobium films can be electrically modulated in a liquid-gated geometry device. Tc can be suppressed and enhanced by applying positive and negative gate voltage,…
We demonstrate Young's double-slit experiment with GHz surface acoustic waves (SAWs) on gallium arsenide (GaAs). This experiment differs from the well-known optical case due to the anisotropy of SAW propagation on GaAs. We generate SAWs…
Wireless communication through dynamic spectrum allocation over microwave bands, essential to accommodate exponentially growing data traffic, requires massive array of radio-frequency (RF) filters for adaptive signal shaping at arbitrary…
We predict high-velocity magnetic domain wall (DW) motion driven by out-of-plane acoustic spin in surface acoustic waves (SAWs). We demonstrate that the SAW propagating at a 30-degree angle relative to the x-axis of a 128-degree Y-LiNbO3…
A most intuitive realization of a qubit is a single electron charge sitting at two well-defined positions, such as the left and right sides of a double quantum dot. This qubit is not just simple but also has the potential for high-speed…
The coupling of micro- or nanomechanical resonators via a shared substrate is intensively exploited to built systems for fundamental studies and practical applications. So far, the focus has been on devices operating in the kHz regime with…
Self-heating is a severe problem for high-power GaN electronic and optoelectronic devices. Various thermal management solutions, e.g. flip-chip bonding or composite substrates have been attempted. However, temperature rise still limits…
Migrating active deicing capabilities to transparent materials with low thermal conductivity has a high potential to improve the operations of several seminal industries in the automotive, robotic, energy, and aerospace sectors. However,…
Surface acoustic wave (SAW) devices are widely used in sensing and biosensing but generally suffer from strong attenuation in liquid environments. Conventional approaches rely on reflectors to reduce these losses, yet these components…
Gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability than that of the conventional FinFET architecture. The significantly higher electron mobility of…
In this paper, 20nm - 80nm channel length (Lch) InGaAs gate- all-around (GAA) nanowire MOSFETs with record high on- state and off-state performance have been demonstrated by equivalent oxide thickness (EOT) and nanowire width (WNW) scaling…
Surface acoustic waves (SAWs) can create moving quantum dots in piezoelectric materials. Here we show how electron-spin qubits located on dynamic quantum dots can be entangled. Previous theoretical and numerical models of quantum-dot…
We report evidence of the magnetization reversal in nanoparticles by surface acoustic waves (SAWs). The experimental system consists of isolated magnetite nanoparticles dispersed on a piezoelectric substrate. Magnetic relaxation from a…