Related papers: Multibit Ferroelectric Memcapacitor for Non-volati…
Current portable memory device relies heavily on flash memory technology for its implementation. New generation of non-volatile memory is likely to replace floating gates, charge-trapping memory currently still suffering from inadequate…
Reservoir computing is a neuromorphic architecture that potentially offers viable solutions to the growing energy costs of machine learning. In software-based machine learning, neural network properties and performance can be readily…
Brain-inspired computing aims to mimic cognitive functions like associative memory, the ability to recall complete patterns from partial cues. Memristor technology offers promising hardware for such neuromorphic systems due to its potential…
Here we investigate epitaxial Hf0.5Zr0.5O2 ferroelectric thin films as potential candidates to be used as non-volatile electric-field-modulated thermal memories. The electric-field dependence of the thermal conductivity of…
Employing many-valued logic (MVL) data processing allows to dramatically increase the performance of computing circuits. Here we propose to employ ferroelectrics for the material implementation of MVL units basing on their ability to pin…
On the basis of first-principles calculations we show that the M-type hexaferrite BaFe12O19 exhibits frustrated antiferroelectricity associated with its trigonal bipyramidal Fe3+ sites. The ferroelectric (FE) state of BaFe12O19, reachable…
Freestanding ferroelectric membranes are promising for flexible electronics, nonvolatile memory, photonics, and spintronics, but their synthesis is challenged by the need for reproducibility with precise stoichiometric control. Here, we…
Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with Carbon, show non-volatile current-voltage (I-V) characteristics, which are both universal and repeatable. We have shown spectroscopic evidence of the introduction of…
In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafnium oxides are at the forefront. However, in epitaxial tunnel…
Although technologically challenging, the integration of ferroelectric thin films with graphene spintronics potentially allows the realization of highly efficient, electrically tuneable, non-volatile memories. Here, the atomic layer…
Electric control of magnetic properties is an important challenge for modern magnetism and spintronic development. In particular, an ability to write magnetic state electrically would be highly beneficial. Among other methods, the use of…
Brain-inspired computing architectures attempt to emulate the computations performed in the neurons and the synapses in human brain. Memristors with continuously tunable resistances are ideal building blocks for artificial synapses. Through…
Neuromorphic in-memory computing requires area-efficient architecture for seamless and low latency parallel processing of large volumes of data. Here, we report a compact, vertically integrated/stratified field-effect transistor (VSFET)…
Recent breakthroughs in associative memories suggest that silicon memories are coming closer to human memories, especially for memristive Content Addressable Memories (CAMs) which are capable to read and write in analog values. However, the…
The discovery of interfacial ferroelectricity in two-dimensional rhombohedral (3R)-stacked semiconductors opens up a new pathway for achieving ultrathin computing-in-memory devices. However, exploring ferroelectricity switching in natural…
We present a sensitive, tunable radio-frequency resonator designed to detect reactive changes in nanoelectronic devices down to dilution refrigerator temperatures. The resonator incorporates GaAs varicap diodes to allow electrical tuning of…
An experimentally-calibrated carbon nanotube compact transistor model has been used here to design two high-frequency (HF) circuits with two different functionalities each: a phase configurable amplifier (PCA) and a frequency configurable…
Ferroelectric field effect transistors (FeFETs) are being actively investigated with the potential for in-memory computing (IMC) over other non-volatile memories (NVMs). Content Addressable Memories (CAMs) are a form of IMC that performs…
Memristor technology shows great promise for energy-efficient computing, yet it grapples with challenges like resistance drift and inherent variability. For filamentary Resistive RAM (ReRAM), one of the most investigated types of memristive…
Memristors are promising next-generation memory candidates that are nonvolatile, possess low power requirements and are capable of nanoscale fabrication. In this article we physically realise and describe the use of organic memristors in…