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Optically addressable spins associated with defects in wide-bandgap semiconductors are versatile platforms for quantum information processing and nanoscale sensing, where spin-dependent inter-system crossing (ISC) transitions facilitate…
Recent advances in integrated photonics have enabled on-chip signal modulation and processing through localized photon-phonon interactions. For acousto-optic devices, compact footprint and high efficiency are essential for dense…
Color centers in solid state crystals have become a frequently used system for single photon generation, advancing the development of integrated photonic devices for quantum optics and quantum communication applications. In particular,…
Scalable photonic quantum information technologies require a platform combining quantum light sources, waveguides, and detectors on a single chip. Here, we introduce a van der Waals platform comprising strain-engineered bilayer WSe$_2$…
Hexagonal boron nitride (hBN) has emerged as a promising material platform for nanophotonics and quantum sensing, hosting optically-active defects with exceptional properties such as high brightness and large spectral tuning. However,…
Integrated photonics could bring transformative breakthroughs in computing, networking, imaging, sensing, and quantum information processing, enabled by increasingly sophisticated optical functionalities on a photonic chip. However,…
Modern communication networks demand ever-increasing transmission bandwidth, placing stringent requirements on low-cost, high-performance electro-optic modulators. Substantial advances have been made in integrated photonics employing…
The fruitful association of quantum and integrated photonics holds the promise to produce, manipulate, and detect quantum states of light using compact and scalable systems. Integrating all the building-blocks necessary to produce…
Optoelectronic components with adjustable parameters, from variable-focal-length lenses to spectral filters that can change functionality upon stimulation, have enormous technological importance. Tuning of such components is conventionally…
Photonic integrated circuits currently use platform intrinsic thermo-optic and electro-optic effects to implement dynamic functions such as switching, modulation and other processing. Currently, there is a drive to implement field…
Among the various kinds of spin defects in hBN, the negatively charged boron vacancy ($\rm V_B^-$) spin defect that can be deterministically generated is undoubtedly a potential candidate for quantum sensing, but its low quantum efficiency…
Optically addressable spin defects hosted in two-dimensional van der Waals materials represent a new frontier for quantum technologies, promising to lead to a new class of ultrathin quantum sensors and simulators. Recently, hexagonal boron…
The escalating data volume and complexity resulting from the rapid expansion of artificial intelligence (AI), internet of things (IoT) and 5G/6G mobile networks is creating an urgent need for energy-efficient, scalable computing hardware.…
Superconducting transmon qubits are commonly made with thin-film Nb wiring, but recent studies have shown increased performance with Ta wiring. In this work, we compare the resonator-induced single photon, millikelvin dielectric loss for…
Integrated optical devices able to control light matter interactions on the nanoscale have attracted the attention of the scientific community in recent years. However, most of these devices are based on silicon waveguides, limiting their…
Two-dimensional (2D) semiconductors are emerging as a versatile platform for nanophotonics, offering unprecedented tunability in optical properties through exciton resonance engineering, van der Waals heterostructuring, and external field…
Quantum photonics has rapidly advanced as a key area for developing quantum technologies by harnessing photons' inherent quantum characteristics, particularly entanglement. Generation of entangled photon pairs, known as Bell states, is…
Boron nitride is a promising material for nanotechnology applications due to its two-dimensional graphene-like, insulating, and highly-resistant structure. Recently it has received a lot of attention as a substrate to grow and isolate…
Ultrawide-bandgap semiconductors are attractive for solar-blind ultraviolet (UV) detection owing to their intrinsically low noise and high spectral selectivity, yet their deployment in large-area, high-density electronic imaging systems…
Integrating epitaxial BaTiO$_3$ (BTO) with Si is essential for leveraging its ferroelectric, piezoelectric, and nonlinear optical properties in microelectronics. Recently, heterogeneous integration approaches that involve growth of BTO on…