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Exploration of novel resistive switching materials attracts attention to replace conventional Si-based transistors and to achieve neuromorphic computing that can surpass the limit of the current Von-Neumann computing for the time of…
Achieving the full understanding and control of the insulator-to-metal transition in Mott materials is key for the next generation of electronics devices, with applications ranging from ultrafast transistors, volatile and non-volatile…
Results of first principles augmented spherical wave electronic structure calculations for niobium dioxide are presented. Both metallic rutile and insulating low-temperature NbO2, which crystallizes in a distorted rutile structure, are…
Vanadium dioxide, an archetypal correlated-electron material, undergoes an insulator-metal transition near room temperature that exhibits electron-correlation-driven and structurally-driven physics. Using ultrafast optical spectroscopy and…
We report structural, magnetization, electrical resistivity and nuclear- and electron spin resonance data of the complex transition metal oxide In_2VO_5 in which structurally well-defined V-O chains are realized. An itinerant character of…
An abrupt first-order metal-insulator transition (MIT) without structural phase transition is first observed by current-voltage measurements and micro-Raman scattering experiments, when a DC electric field is applied to a Mott insulator…
Vanadium dioxide (VO2) has been widely studied for its rich physics and potential applications, undergoing a prominent insulator-metal transition (IMT) near room temperature. The transition mechanism remains highly debated, and little is…
Brain-inspired non-Boolean computing offers intrinsic error tolerance and parallelism, but its practical deployment is limited by the lack of compact, energy-efficient spiking hardware compatible with large-scale integration. Mott…
The switching and optical properties of phase-change thin films are actively investigated for future smart optical devices. The possibility of having more than one stable state, the large optical contrast between phases, and the fast and…
We report in-situ Raman scattering studies of electrochemically top gated VO$_2$ thin film to address metal-insulator transition (MIT) under gating. The room temperature monoclinic insulating phase goes to metallic state at a gate voltage…
Hysteresis in the current-voltage characteristic in a superconducting nanowire reflects an underlying bistability. As the current is ramped up repeatedly, the state switches from a superconductive to a resistive one, doing so at random…
Casimir forces between material surfaces at close proximity of less than 200 nm can lead to increased chaotic behavior of actuating devices depending on the strength of the Casimir interaction. We investigate these phenomena for phase…
Electrostatic control of the metal-insulator transition (MIT) in an oxide semiconductor could potentially impact the emerging field of oxide electronics. Vanadium dioxide is of particular interest due to the fact that the MIT happens in the…
We present measurements of the infrared response of the quasi-one-dimensional organic conductor (TMTSF)2$SO3 along (E||a) and perpendicular (E||b') to the stacking axis as a function of temperature. Above the metal-insulator transition…
Electronic Raman scattering experiments in a wide variety of materials (ranging from mixed-valence materials to Kondo insulators to high-temperature superconductors) show anomalous behavior in the B_{1g} channel when the system is on the…
Switchability of materials properties by applying controlled stimuli such as voltage pulses is an emerging field of study with applicability in adaptive and programmable devices like neuromorphic transistors or non-emissive smart displays.…
Vanadium dioxide (VO2) as a phase-change material controls the transferred heat during phase transition process between metal and insulator states. At temperature above 68C, the rutile structure VO2 keeps the heat out and increases the IR…
The use of intense tailored light fields is the perfect tool to achieve ultrafast control of electronic properties in quantum materials. Among them, Mott insulators are materials in which strong electron-electron interactions drive the…
We present a method for including inelastic scattering in a first-principles density-functional computational scheme for molecular electronics. As an application, we study two geometries of four-atom gold wires corresponding to two…
Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and…