Related papers: Row Hammer Effect and Floating Body Effect of Mono…
Monolithic 3D (M3D) technology enables high density integration, performance, and energy-efficiency by sequentially stacking tiers on top of each other. M3D-based network-on-chip (NoC) architectures can exploit these benefits by adopting…
Read disturbance in modern DRAM chips is a widespread phenomenon and is reliably used for breaking memory isolation, a fundamental building block for building robust systems. RowHammer and RowPress are two examples of read disturbance in…
A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and…
Computer simulation of the hopping charge transport in disordered organic materials has been carried out explicitly taking into account charge-charge interactions. This approach provides a possibility to take into account dynamic…
Magnetic reconnection, a fundamental plasma process, is pivotal in understanding energy conversion and particle acceleration in astrophysical systems. While extensively studied in two-dimensional (2D) configurations, the dynamics of…
3D integration, i.e., stacking of integrated circuit layers using parallel or sequential processing is gaining rapid industry adoption with the slowdown of Moore's law scaling. 3D stacking promises potential gains in performance, power and…
Results from 2.5D and 3D studies of the onset and development of the tearing instability are presented, using high fidelity resistive MHD simulations. A limited parameter study of the strength of the reconnecting field (or shear angle) was…
Two-dimensional materials offer exceptional tunability of electronic and optical properties via strain and doping engineering. However, the unintentional introduction of polymeric residues during wet chemical 2D film transfer processes such…
We develop a new three-dimensional multiparticle Monte Carlo ({\it 3DmpMC}) approach in order to study the hopping charge transport in disordered organic molecular media. The approach is applied here to study the charge transport across an…
Resistive random access memory (RRAM) is very well known for its potential application in in-memory and neural computing. However, they often have different types of device-to-device and cycle-to-cycle variability. This makes it harder to…
Electrostatic doping in materials can lead to various exciting electronic properties, such as metal-insulator transition and superconductivity, by altering the Fermi level position or introducing exotic phases. Cd3As2, a three-dimensional…
The marriage between a two-dimensional layered material (2DLM) and a complex transition metal oxide (TMO) results in a variety of physical and chemical phenomena that would not have been achieved in either material alone. Interesting recent…
Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching…
In-memory computing (IMC) can eliminate the data movement between processor and memory which is a barrier to the energy-efficiency and performance in Von-Neumann computing. Resistive RAM (RRAM) is one of the promising devices for IMC…
In this work, we propose a novel integration in order to significantly reduce the High Resistance State vari-ability and to improve thermal stability in Oxide-based Resistive Random Access Memory (OxRRAM) devices. A novel device featuring a…
Mode-I fracture exhibits microbranching in the high velocity regime where the simple straight crack is unstable. For velocities below the instability, classic modeling using linear elasticity is valid. However, showing the existence of the…
Monolithic 3D integration has become a promising solution for future computing needs. The metal inter-layer via (MIV) forms interconnects between substrate layers in Monolithic 3D integration. Despite small size of MIV, the area overhead…
Sliding bilayers are systems that exploit the possibility of relatively translating two monolayers along a specific direction in real space, such that different stackings could be implemented in the process. This simple approach allows for…
Machine learning (ML) has entered the mobile era where an enormous number of ML models are deployed on edge devices. However, running common ML models on edge devices continuously may generate excessive heat from the computation, forcing…
Rowhammer is a serious security problem of contemporary dynamic random-access memory (DRAM) where reads or writes of bits can flip other bits. DRAM manufacturers add mitigations, but don't disclose details, making it difficult for customers…