Related papers: Single femtosecond laser pulse-driven ferromagneti…
The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in…
Due to the lack of a net magnetic moment, antiferromagnets possess a unique robustness to external magnetic fields and are thus predicted to play an important role in future magnetic technologies. However, this robustness also makes them…
Louis Neel pointed out in his Nobel lecture that while abundant and interesting from a theoretical viewpoint, antiferromagnets did not seem to have any applications. Indeed, the alternating directions of magnetic moments on individual atoms…
Antiferromagnets are promising candidates for ultrafast spintronic applications, leveraging current-induced spin-orbit torques. However, experimentally distinguishing between different switching mechanisms of the staggered magnetization…
Magnetic straintronics, the strain-mediated control of magnetic anisotropy, has emerged as a key direction for next-generation energy-efficient technologies. In multiferroic heterostructures, magnetoelectric coupling is typically achieved…
A study of dynamic and reversible voltage controlled magnetization switching in ferromagnetic Co/Pt thin film with perpendicular magnetic anisotropy at room temperature is presented. The change in the magnetic properties of the system is…
The magnetization dynamics for ferrimagnets at the angular momentum compensation temperature T_A is believed to be analogous to that for antiferromagnets. We investigated the pulsed-laser-induced magnetization dynamics in amorphous…
Electrical switching of antiferromagnets (AFM) is critical for AFM spintronics. However, electrical pulse-induced Neel vector reorientation in AFM insulators, while predicted to occur at much faster timescales than ferromagnetic switching,…
High-speed magnetization switching of a nanomagnet is necessary for faster information processing. The ballistic switching by a pulsed magnetic filed is a promising candidate for the high-speed switching. It is known that the switching…
On-demand spin orientation with long polarized lifetime and easily detectable signal is an ultimate goal for spintronics. However, there still exists a trade-off between controllability and stability of spin polarization, awaiting a…
Ultrafast control of magnetization on the nanometer length scale, in particular all-optical switching, is key to putting ultrafast magnetism on the path towards future technological application in data storage technology. However,…
The effect of thermal fluctuations on spin-transfer switching has been studied for a broad range of time scales (sub-ns to seconds) in a model system, a uniaxial thin film nanomagnet. The nanomagnet is incorporated into a spin-valve…
Voltage-driven 180$^\circ$ magnetization switching without electric current provides the possibility for revolutionizing the spintronics. We demonstrated the voltage-driven charge-mediated 180$^\circ$ magnetization switching at room…
By comparing femtosecond laser pulse induced ferro- and antiferromagnetic dynamics in one and the same material - metallic dysprosium - we show both to behave fundamentally different. Antiferromagnetic order is considerably faster and much…
Femtosecond laser excitation of materials that exhibit magnetic spin textures promises advanced magnetic control via the generation of ultrafast and non-equilibrium spin dynamics. We explore such possibilities in ferrimagnetic [Fe(0.35…
Experimentally observed ultrafast all-optical magnetization reversal in ferrimagnetic metals and heterostructures based on antiferromagnetically coupled ferromagnetic $d-$ and $f-$metallic layers relies on intricate energy and angular…
Understanding spin-lattice coupling represents a key challenge in modern condensed matter physics, with crucial importance and implications for ultrafast and 2D-magnetism. The efficiency of angular momentum and energy transfer between spins…
A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The…
The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization…
Numerical simulation of switching process of high-voltage silicon photodiodes, phototransistors and photothyristors those triggered-on homogeneously over the area by picosecond laser pulses, has been performed for the first time. The…