Related papers: Single femtosecond laser pulse-driven ferromagneti…
Single Pulse All Optical Helicity Independent Switching (AO-HIS) represents the ability to reverse the magnetic moment of a nanostructure using a femtosecond single laser pulse. It is an ultrafast method to manipulate magnetization without…
Perpendicular magnetic tunnel junctions are one of the building blocks for spintronic memories, which allow fast nonvolatile data access, offering substantial potentials to revolutionize the mainstream computing architecture. However,…
Single pulse All Optical Helicity-Independent Switching is demonstrated in an in-plane magnetized magnetic tunnel junction. A toggle switching of the 2nm thick Co40Fe40B20 soft layer could be achieved by exchange coupling the Co40Fe40B20…
A quantitative understanding of the processes that trigger light-induced demagnetization on ultrashort timescales is crucial for achieving an ultrafast, radiation-controlled magnetic response in materials. This milestone is essential for…
Magnetic random access memory that uses magnetic tunnel junction memory cells is a high performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today its speed is limited by the high magnetization of…
We present a microscopic magnetic domain imaging study of single-shot all-optical magnetic toggle switching of a ferrimagnetic Gd$_{26}$Fe$_{74}$ film with out-of-plane easy axis of magnetization by x-ray magnetic circular dichroism…
Ultrafast all-optical magnetization switching (AOS) holds great promise for nextgeneration spintronic memory and hybrid spintronic-photonic systems. However, most implementations to date rely on bulky free-space optical setups, limiting…
We present an ultrafast route for a controlled, toggle switching of magnetic vortex cores with ultrashort unipolar magnetic field pulses. The switching process is found to be largely insensitive to extrinsic parameters, like sample size and…
The control of nonthermal, all-optical magnetization switching under the regime with an independent state of laser polarization opens up new opportunities for ultrafast magnetic recording. Here, we investigate the photo-magnetic…
The demand for faster magnetization switching speeds and lower energy consumption has driven the field of spintronics in recent years. The magnetic tunnel junction is the most developed spintronic memory device in which the magnetization of…
The authors show that the magnetization of a magnetostrictive/piezoelectric multiferroic single-domain shape-anisotropic nanomagnet can be switched with very small voltages that generate strain in the magnetostrictive layer. This can be the…
Spintronics had a widespread impact over the past decades due to transferring information by spin rather than electric currents. Its further development requires miniaturization and reduction of characteristic timescales of spin dynamics…
Owing to their high magnon frequencies, antiferromagnets are key materials for future high-speed spintronics. Picosecond switching of antiferromagnetic order has been viewed a milestone for decades and pursued only by using ultrafast…
Magnetization reversal by a femtosecond circularly polarized laser pulse has been recently demonstrated in rare-earth doped transition metals (RE-TM). The switching mechanism has been attributed to an inverse Faraday effect and thermal…
Femtosecond laser control of antiferromagnetic order is a cornerstone for future memory and logic devices operating at terahertz clock rates. The advent of altermagnets -- antiferromagnets with unconventional spin-group symmetries --…
Since the beginning of femtomagnetism, it has been hotly debated how an ultrafast laser pulse can demagnetize a sample and switch its spins within a few hundred femtoseconds, but no consensus has been reached. In this paper, we propose that…
The spin transfer torque is a phenomenon in which angular momentum of a spin polarized electrical current entering a ferromagnet is transferred to the magnetization. The effect has opened a new research field of electrically driven…
Exchange bias is applied ubiquitously throughout the spintronics industry for pinning magnetic moment in an orientation robust against external magnetic field disturbances. Enabling efficient manipulation of the exchange-biased pinning…
We demonstrate room-temperature nucleation and manipulation of topological spin textures in the van der Waals (vdW) ferromagnet, Fe3GaTe2, through laser pulse excitation. By leveraging laser-induced heating and subsequent cooling, we access…
As a layered ferroelectric material, CuInP2S6 has garnered significant attention for its robust ferroelectric state and potential applications in memory devices. In this work, we demonstrate that with short laser pulses ultrafast reversible…