Related papers: 2D Canonical Approach for Beating the Boltzmann Ty…
Scaling field-effect transistors (FETs) into the sub-10-nm regime fundamentally alters the transport mechanism, challenging long-standing design rules. This study investigates monolayer TMD FETs with channel lengths from 12 nm to 3 nm,…
This work explores the consequences of introducing a piezoelectric gate barrier in a normal field-effect transistor. Because of the positive feedback of strain and piezoelectric charge, internal charge amplification occurs in such an…
The sub-threshold swing is the fundamental critical parameter determining the operation of a transistor in low-power applications such as switches. It determines the fraction of dissipation due to the gate capacitance used for turning the…
Power dissipation is a great challenge for the continuous scaling down and performance improvement of CMOS technology, due to thermionic current switching limit of conventional MOSFETs. In this work, we show that this problem can be…
The physics of low subthreshold devices is interpreted in terms of a gate dependent change in their mode averaged transmission function, in addition to a capacitive shift in their overall mode spectrum. Accordingly, we explore a variety of…
The Landauer principle states that at least $k_B T \ln 2$ of energy is required to erase a 1-bit memory, with $k_B T$ the thermal energy of the system. We study the effects of inertia on this bound using as one-bit memory an underdamped…
The topological quantum field-effect transition in buckled 2D-Xenes can potentially be engineered to enable sub-thermionic transistor operation coupled with dissipationless ON-state conduction. Substantive device design strategies to…
This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical temperature, the derived limit saturates to a value that is…
Thermoelectric transport involving an arbitrary number of terminals is discussed in the presence of a magnetic field breaking time-reversal symmetry within the linear response regime using the Landauer-B\"uttiker formalism. We derive a…
Recent measurements on ultra-thin body Negative Capacitance Field Effect Transistors have shown subthreshold behaviors that are not expected in a classical MOSFET. Specifically, subthreshold swing was found to decrease with increased gate…
Quantum annealing leverages quantum tunneling for non-local searches, thereby minimizing memory effects that typically arise from metastabilities. Nonetheless, recent work has demonstrated robust hysteresis in large-scale transverse-field…
Molecular transistors have the potential for switching with lower gate voltages than conventional field-effect transistors. We have calculated the performance of a single-molecule device in which there is interference between electron…
This paper challenges the existing victim-focused counter-based RowHammer detection mechanisms by experimentally demonstrating a novel multi-sided fault injection attack technique called Threshold Breaker. This mechanism can effectively…
The Landauer principle establishes a fundamental lower bound on the energetic cost of the erasure of a one-bit memory in thermal equilibrium. Here, we experimentally demonstrate how this bound can be effectively circumvented by introducing…
An unresolved challenge facing electronics at a few-nm scale is that resistive channels start leaking due to quantum tunneling. This affects the performance of nanoscale transistors, with single-molecule devices displaying particularly low…
When interacting spin systems possess non-zero magnetization or topological entanglement entropy below the transition temperature, they often serve as classical or quantum self-correcting memory. In particular, their memory time grows…
Traditional transistors based on complementary metal-oxide-semiconductor (CMOS) and metal-oxide-semiconductor field-effect transistors (MOSFETs) are facing significant limitations as device scaling reaches the limits of Moore's Law. These…
Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary…
Using the Landauer formulation of transport theory, we predict that dielectric quantum wires should exhibit quantized thermal conductance at low temperatures in a ballistic phonon regime. The quantum of thermal conductance is universal,…
Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing the stable static negative capacitance in…