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Layered two-dimensional (2D) semiconductors have been widely exploited in photodetectors due to their excellent electronic and optoelectronic properties. To improve their performance, photogating, photoconductive, photovoltaic,…
Germanium (Ge) detectors with ability of measuring a single electron-hole (e-h) pair are needed in searching for light dark matter (LDM) down to the MeV scale. We investigate the feasibility of Ge detectors with amorphous-Ge (a-Ge) contacts…
Highly sensitive and fast photodetector devices with CdSe quantum nanowires as active elements have been developed exploiting the advantages of electro- and wet-chemical routes. Bismuth nanoparticles electrochemically synthesized directly…
The EMCCD is a type of CCD that delivers fast readout times and negligible readout noise, making it an ideal detector for high frame rate applications which improve resolution, like lucky imaging or shift-and-add. This improvement in…
Topological insulators have shown great potential for future optoelectronic technology due to their extraordinary optical and electrical properties. Photodetectors, as one of the most widely used optoelectronic devices, are crucial for…
Photonic entanglement is a crucial resource for quantum information technologies, including quantum information processing and long-distance communication. These applications call for narrow-band entanglement sources, being compatible with…
Single photon detector (SPD) has a maximum count rate due to its dead time, which results in that the dynamic range of photon counting optical time-domain reflectometry (PC-OTDR) de-creases with the length of monitored fiber. To further…
Understanding the noise characteristics of high quantum efficiency silicon-based ultraviolet detectors, developed by the Microdevices Lab at the Jet Propulsion Laboratory, is critical for current and proposed UV missions using these…
In order to increase the response speed of the InSe-based photodetector with high photoresponsivity, graphene is used as the transparent electrodes to modify the difference of the work function between the electrodes and the InSe. As…
Superconducting nanowire single-photon detectors (SNSPDs) combine high detection efficiency, low noise, and excellent timing resolution, making them a leading platform for photon-counting applications. However, despite decades of materials…
Entangled photon sources (EPSs) are essential building blocks for scalable quantum communication and quantum key distribution (QKD). We present a stable, highly nondegenerate EPS based on type-0 spontaneous parametric down-conversion (SPDC)…
We present InP-based evanescently-coupled waveguide modified uni-traveling carrier photodiodes (MUTC-PDs) exhibiting a breakthrough in bandwidth. The optimization of carrier transport and optical coupling is achieved through a detailed…
Superconducting Nanowire Single Photon Detector (SNSPD) emerges as a potential candidate in the multiple fields requiring sensitive and fast photodetection. While nanowires of low temperature superconducting detectors are mature with…
A new type of radiation detector, a p-type modified electrode germanium diode, is presented. The prototype displays, for the first time, a combination of features (mass, energy threshold and background expectation) required for a…
A simplistic design of a self-powered UV-photodetector device based on hybrid r-GO/GaN is demonstrated. Under zero bias, the fabricated hybrid photodetector shows a photosensivity of ~ 85% while ohmic contact GaN photodetector with…
Graphene has shown great potentials for high-speed photodetection. Yet, the responsivities of graphene-based high-speed photodetectors are commonly limited by the weak effective absorption of atomically thin graphene. Here, we propose and…
The detective quantum efficiency (DQE) and normalised noise power spectrum (NNPS) of the Timepix4 hybrid pixel detector in event-driven mode in TEM have been measured at 100 kV and 200 kV. In a raw data readout mode, the zero-frequency DQE…
Uni-traveling-carrier photodiodes (UTC-PDs), which utilize only electrons as the active carriers, have become indispensable in high-speed optoelectronics due to their unique capabilities, such as high saturation power and broad bandwidth.…
In this Letter, we propose a new approach to process high-dimensional quantum information encoded in a photon frequency domain. In contrast to previous approaches based on nonlinear optical processes, no active control of photon energy is…
We use time- and angle-resolved photoemission spectroscopy (TR-ARPES) combined with density functional theory to investigate ultrafast carrier dynamics in low-symmetry layered semiconducting PdSe$_2$. The indirect bandgap is determined to…