Related papers: High Bandwidth and Ultra-low Dark Current Ge Photo…
We have integrated a commercial avalanche photodiode (APD) and the circuitry needed to operate it as a single-photon detector (SPD) onto a single PC-board. At temperatures accessible with Peltier coolers (~200-240K), the PCB-SPD achieves…
The future interconnect links in intra- and inter-chip require the photodetector with high bandwidth, ultra-wide waveband, compact footprint, low-cost, and compatible integration process with silicon complementary metal-oxide-semiconductor…
Quantum technologies with quantum correlated light require photodiodes with near-perfect `true' quantum efficiency, the definition of which adequately accounts for the photodiode dark noise. Future squeezed-light-enhanced gravitational wave…
A single-photon avalanche detector (SPAD) for high-speed quantum-key generation has successfully been developed. It has the highest photon detection repetition frequency and the lowest dark count rate in the world, as a board-mountable…
Engineering nanoscale light matter interaction in mixed dimensional semiconductor heterostructures offers a pathway to mitigate the intrinsic gain bandwidth trade off in photodetectors. Here, we report a broadband, high responsivity 2D and…
The monolithic integration of extended short-wave infrared (e-SWIR) photodetectors (PDs) on silicon is highly sought-after to implement manufacturable, cost-effective sensing and imaging technologies. With this perspective, GeSn PIN PDs…
The detection of low-energy deposition in the range of sub-eV through ionization using germanium (Ge) with a bandgap of $\sim$0.7 eV requires internal amplification of charge signal. This can be achieved through high electric field which…
Graphene, owing to its zero bandgap electronic structure, is promising as an absorption material for ultra-wideband photodetection applications. However, graphene-absorption based detectors inherently suffer from poor responsivity due to…
Generally, a superconducting nanowire single-photon detector (SNSPD) is composed of wires with a typical width of ~100 nm. Recent studies have found that superconducting strips with a micrometer-scale width can also detect single photons.…
Current optical communication system operating at 1.55 {\mu}m wavelength band may not be able to continually satisfy the growing demand on the data capacity within the next few years. Opening a new spectral window at around 2 {\mu}m…
Photonic addressing of superconducting circuits has been proposed to overcome wiring complexity and heat load challenges, but superconducting-photonic links suffer from an efficiency-noise trade-off that limits scalability. This trade-off…
Photon detectors featuring single-photon sensitivity play a crucial role in various scientific domains, including high-energy physics, astronomy, and quantum optics. Fast response time, high quantum efficiency, and minimal dark counts are…
Using a single neutral 87Rb atom held in an optical trap, and "quantum jump" detection of single-photon-initiated state changes, we demonstrate a single-photon quantum jump photodetector (QJPD) with intrinsically narrow bandwidth and strong…
We investigate the detection of an ultra-bright single-photon source using highly efficient superconducting nanowire single-photon detectors (SNSPDs) at telecom wavelengths. Both the single-photon source and the detectors are characterized…
Integrated photonic quantum information processing (QIP) has advanced rapidly due to progress in various nanophotonic platforms. Single photon detectors have been the subject of intense study due to their ubiquity in QIP systems, yet many…
Detecting single photons is essential for applications such as dark matter detection, quantum science and technology, and biomedical imaging. Superconducting nanowire single-photon detectors (SNSPDs) excel in this task due to their…
For the last 50 years, superconducting detectors have offered exceptional sensitivity and speed for detecting faint electromagnetic signals in a wide range of applications. These detectors operate at very low temperatures and generate a…
We demonstrate self-powered \b{eta}-Ga2O3 deep-UV metal-semiconductor-metal (MSM) photodetectors (PD) with 0.5% external quantum efficiency (EQE) at zero bias. 150 nm thick (-201)-oriented epitaxial \b{eta}-Ga2O3-films were grown on c-plane…
Separate absorption charge multiplication germanium tin on silicon avalanche photodiode offers a viable solution to achieve CMOS compatible, high sensitivity detection technology in SWIR or extended SWIR range, leveraging the excellent…
Simulation of detecting photoelectrons using multi-level multi-electron (MLME) finite-difference time-domain (FDTD) method with an application to near-field subwavelength imaging based on semiconductor nanophotodetector (NPD) array is…