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Traditionally, advancements in semiconductor devices have been driven by lattice-matched heterojunctions with tailored band alignments through heteroepitaxy techniques. However, there is significant interest in expanding the capabilities of…
Uncooled Terahertz (THz) photodetectors (PDs) showing fast (ps) response and high sensitivity (noise equivalent power (NEP) < $nWHz^{-1/2}$) over a broad (0.5THz-10THz) frequency range are needed for applications in high-resolution…
This paper reports a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes: 1) the demonstration of a set of photoconductors with Sn compositions ranging from 10.5% to 22.3%, showing the cut-off wavelength has…
Dark Matter and Double Beta Decay experiments require extremely low radioactivity within the detector materials. For this purpose, the University of California, Los Angeles and Hamamatsu Photonics have developed the QUartz Photon…
Efficiently distinguishing photon numbers is a crucial yet challenging technology for various quantum information and quantum metrology applications. While superconducting transition edge sensors offer good photon-number-resolving (PNR)…
We report on the fastest silicon waveguide integrated photodetectors with a bandwidth larger than 128 GHz for ultrafast optical communication. The photodetectors are based on CVD graphene that is compatible to wafer scale production…
n-Ga2O3/p-GaN heterojunction based photodetector devices are fabricated on Si-doped (-201) \beta-Ga2O3 epitaxial layers grown by pulsed laser deposition (PLD) technique on p-type c-GaN/sapphire templates. These devices demonstrate the…
Layered two-dimensional materials have shown novel optoelectronic properties and are well suited to be integrated in planar photonic circuits. For example, graphene has been utilized for wideband photodetection. Because graphene lacks a…
Recent progress in the development of superconducting nanowire single-photon detectors (SNSPD) has delivered ex-cellent performance, and their increased adoption has had a great impact on a range of applications. One of the key…
Balanced photodetector (BPD) is an important component for high-speed coherent receiver. Optimization strategy of waveguide-based multi-quantum well (MQW) BPDs, operating at 1550 nm is demonstrated on generic InP platform. Design parameters…
We investigate the Predictable Quantum Efficient Detector (PQED) in the visible and near-infrared wavelength range. The PQED consists of two n-type induced junction photodiodes with $Al_2O_3$ entrance window. Measurements are performed at…
We report the fabrication of a superconducting nanowire single-photon detector (SSPD or SNSPD) with an ultralow dark count rate. By introducing optical band-pass filters at the input of the SSPD and cooling the filters at 3 K, the dark…
Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor…
PIXELATED geiger-mode avalanche photodiodes(PPDs), often called silicon photomultipliers (SiPMs) are emerging as an excellent replacement for traditional photomultiplier tubes (PMTs) in a variety of detectors, especially those for subatomic…
We present a new photon number resolving detector (PNR), the Parallel Nanowire Detector (PND), which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic…
Particle IDentification (PID) is a central requirement of the experiments at the future EIC. Hadron PID at high momenta by RICH techniques requires the use of low density gaseous radiators, where the challenge is the limited length of the…
Advanced quantum information science and technology (QIST) applications place exacting de- mands on optical components. Quantum waveguide circuits offer a route to scalable QIST on a chip. Superconducting single-photon detectors (SSPDs)…
We report on a photodetector in which colloidal quantum-dots directly bridge nanometer-spaced electrodes. Unlike in conventional quantum-dot thin film photodetectors, charge mobility no longer plays a role in our quantum-dot junctions as…
Two-dimensional materials are attractive for constructing high-performance photonic chip-integrated photodetectors because of their remarkable electronic and optical properties and dangling-bond-free surfaces. However, the reported…
Thanks to intrinsically short electronic relaxation on the ps time scale, III-V semiconductor unipolar devices are ideal candidates for ultrahigh-speed operation at mid-infrared frequencies. In this work, antenna-coupled, GaAs-based multi…