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Two-dimensional (2D) transition-metal dichalcogenides (TMDC) are considered highly promising platforms for next-generation optoelectronic devices. Owing to its atomically thin structure, device performance is strongly impacted by a minute…

Mesoscale and Nanoscale Physics · Physics 2024-04-16 Sergey Trishin , Christian Lotze , Nils Krane , Katharina J. Franke

Negatively charged boron vacancies ($\small{V_B^-}$) in hexagonal boron nitride (hBN) have recently gained interest as spin defects for quantum information processing and quantum sensing by a layered material. However, the boron vacancy can…

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) are the subject of intense investigation for applications in optics, electronics, catalysis, and energy storage. Their optical and electronic properties can be significantly…

Finding an effective and controllable way to create a sizable energy gap in graphene-based systems has been a challenging topic of intensive research. We propose that the hybrid of boron nitride and graphene (h-BNC) at low BN doping serves…

Mesoscale and Nanoscale Physics · Physics 2023-12-01 Chih-Piao Chuu , Wei-En Tseng , Kuan-Hung Liu , Ching-Ming Wei , Mei-Yin Chou

Boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) have emerged as a promising platform for two-dimensional quantum sensors capable of operating at atomic-scale proximity. However, the mechanisms responsible for photoluminescence…

Recent progress in preparing well controlled 2D van der Waals heterojunctions has opened up a new frontier in materials physics. In this paper we address the intriguing energy gaps that are sometimes observed when a graphene sheet is placed…

Mesoscale and Nanoscale Physics · Physics 2015-02-23 Jeil Jung , Ashley DaSilva , Allan H. MacDonald , Shaffique Adam

Hexagonal boron nitride sheets have been noted especially for their enhanced properties as substrates for sp2 carbon-based nanodevices. To evaluate whether such enhanced properties would remain under various realistic conditions, we…

Mesoscale and Nanoscale Physics · Physics 2015-06-23 Seoung-Hun Kang , Gunn Kim , Young-Kyun Kwon

We present a comprehensive first-principles study on the optoelectronic properties of the single-layer nickel diazenide (penta-NiN$_2$), a recently synthesized Cairo pentagonal 2D semiconductor. We carry out $ab$ $initio$ calculations based…

Materials Science · Physics 2023-12-12 Enesio Marinho , Cesar E. P. Villegas , Pedro Venezuela , Alexandre R. Rocha

The optoelectronic properties induced by oxygen vacancy defects in MgO(111) monolayers have been studied using hybrid level of DFT method. HSE calculations shows significant reduction in electronic band gap of MgO monolayer as a result of…

Materials Science · Physics 2022-04-20 Rituparna Hazarika , Bulumoni Kalita

Evaluation of the defect levels in low-dimensional materials is an important aspect of quantum science. In this article, we report a facile synthesis method of hexagonal boron nitride (h-BN) and evaluate the defects and their light emission…

Mesoscale and Nanoscale Physics · Physics 2022-03-30 Ashly Sunny , Aniket Balapure , Ramakrishnan Ganesan , R. Thamankar

Single layer core/shell structures consisting of graphene as core and hexagonal boron nitride as shell are studied using first-principles plane wave method within density functional theory. Electronic energy level structure is analysed as a…

Mesoscale and Nanoscale Physics · Physics 2014-08-05 S. Cahangirov , S. Ciraci

The practical implementation of lithium-metal anodes has been hindered by uncontrollable dendrite formation and interfacial instability. This study presents a defect-engineering approach of a chemically stable and electrically insulating…

Two-dimensional (2D) materials have garnered significant attention in recent years due to their atomically thin structure and unique electronic and optoelectronic properties. To harness their full potential for applications in…

High entropy metal nitrides are an important material class in a variety of applications, and the role of nitrogen vacancies is of great importance for understanding their stability and mechanical properties. We study six different high…

Materials Science · Physics 2026-01-05 Charith R. DeSilva , Matthew D. Witman , Dallas R. Trinkle

We investigate the electronic properties of semi-metallic (12,0) carbon nanotubes in the presence of a variety of mono-, di- and hexa-vacancy defects, by using first principle DFT combined with non-equilibrium Green's function technique. We…

Mesoscale and Nanoscale Physics · Physics 2009-10-08 Hui Zeng , Huifang Hu , Jean-Pierre Leburton

Atomically thin monolayers of graphene show excellent electronic properties which have led to a great deal of research on their use in nanoscale devices. However, heat management of such nanoscale devices is essential in order to improve…

Recently, the successful synthesis of the pentagonal form of PdTe$_{2}$ monolayer (\emph{p}-PdTe$_{2}$) was reported [Liu~\emph{et al.}, Nature Materials \textbf{23}, 1339 (2024)]. In this work, we present an extensive first-principles…

Materials Science · Physics 2025-01-07 Poonam Sharma , Vaishali Roondhe , Alok Shukla

Due to atomically thin structure, graphene/hexagonal boron nitride (G/hBN) heterostructures are intensively sensitive to the external mechanical forces and deformations being applied to their lattice structure. In particular, strain can…

Mesoscale and Nanoscale Physics · Physics 2018-12-03 Zahra Khatibi , Afshin Namiranian , S. F. K. S. Panahi

The concept of optically addressable spin states of deep level defects in wide band gap materials is successfully applied for the development of quantum technologies. Recently discovered negatively charged boron vacancy defects (VB) in…

Silicene is a promising 2D Dirac material as a building block for van der Waals heterostructures (vdWHs). Here we investigate the electronic properties of hexagonal boron nitride/silicene (BN/Si) vdWHs using first-principles calculations.…

Materials Science · Physics 2021-03-09 Ze-Bin Wu , Yu-Yang Zhang , Geng Li , Shixuan Du , Hong-Jun Gao