Related papers: 62.6 GHz ScAlN Solidly Mounted Acoustic Resonators
This work reports an acoustic solidly mounted resonator (SMR) at 18.64 GHz, among the highest operating frequencies reported. The device is built in scandium aluminum nitride (ScAlN) on top of silicon dioxide (SiO2) and tantalum pentoxide…
This paper reports on Solidly-Mounted Bidimensional Mode Resonators (S2MRs) utilizing 30% Scandium-doped Aluminum Nitride on Silicon Carbide, operating near 16 GHz. Experimental results show mechanical quality factors up to 380,…
This letter reports on Solidly-Mounted Bidimensional Mode Resonators (S2MRs) exploiting a highly-optimized Sezawa mode in 30% Scandium-doped Aluminum Nitride (ScAlN) on Silicon Carbide (SiC) and operating near 16 GHz. Experimental results…
This work reports on the modeling, fabrication, and experimental characterization of a 13 GHz 30% Scandium-doped Aluminum Nitride (ScAlN) Overmoded Bulk Acoustic Resonator (OBAR) for high-frequency Radio Frequency (RF) applications, notably…
Surface Acoustic Wave (SAW) devices featuring Aluminum Scandium Nitride (AlScN) on a 4H-Silicon Carbide (SiC) substrate, offer a unique blend of high sound velocity, low thermal resistance, substantial piezoelectric response, simplified…
This work describes sputtered scandium aluminum nitride (ScAlN) thin-film bulk acoustic resonators (FBAR) at 12.5 GHz with high electromechanical coupling (k2) of 9.5% and quality factor (Q) of 208, resulting in a figure of merit (FoM, Qk2)…
This work describes sputtered scandium aluminum nitride (ScAlN) thin-film bulk acoustic resonators (FBAR) at millimeter wave (mmWave) with high quality factor (Q) using platinum (Pt) electrodes. FBARs with combinations of Pt and aluminum…
This work reports on the measured performance of an Aluminum Scandium Nitride (AlScN) Two-Dimensional Resonant Rods resonator (2DRR), fabricated by using a Sc-doping concentration of 24%, characterized by a low off-resonance impedance (~25…
This work reports a millimeter wave (mmWave) thin-film bulk acoustic resonator (FBAR) in sputtered scandium aluminum nitride (ScAlN). This paper identifies challenges of frequency scaling sputtered ScAlN into mmWave and proposes a stack and…
Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high frequency bands (>8 GHz) are expected to require resonators with…
This article presents a bulk acoustic wave (BAW) resonator with complementary switchable operation in the first and second thickness extensional modes (TE1 and TE2) at 7.04 and 13.4 GHz. Two ferroelectric scandium aluminum nitride…
In this work, we demonstrate a C-band shear-horizontal surface acoustic wave (SH-SAW) resonator with high electromechanical coupling (kt2) of 22% and a quality factor (Q) of 565 based on a thin-film lithium niobate (LN) on silicon carbide…
High-performance piezoelectric resonators are promising energy storage elements for piezoelectric power conversion due to their compact footprint and low loss at frequencies where conventional magnetic components become bulky and…
This paper reports an 11.7 GHz compact 50 ohm ladder filter based on single layer Scandium Aluminum Nitride (ScAlN) film bulk acoustic resonators (FBARs) with platinum (Pt) electrodes, and uses it as a quantitative case study of the limits…
As 5G connectivity proliferates, signal processing applications at 6G centimeter bands have gained attention for urban wireless capacity expansion. At sub-5 GHz, acoustic resonators operating in the fundamental symmetric (S0) Lamb mode hold…
In this work, an Aluminum Scandium Nitride (AlScN) on Diamond Sezawa-mode surface acoustic wave (SAW) platform for RF filtering at Ku-band (12-18 GHz) is demonstrated. Thanks to the high acoustic velocity and low-loss diamond substrate, the…
This work presents a new acoustic MEMS resonator technology, dubbed Aluminum Nitride (AlN) Combined Overtone Resonator (COR), capable of addressing the filter requirements for the 5G mmWave spectrum in the 6-40GHz range. The COR exploits…
This work reports on the fabrication and characterization of an Au/ZnO/Pt-based high-overtone bulk acoustic resonator (HBAR) on SiC substrates. We evaluate its microwave characteristics comparing with Si substrates for…
In this work, a 38.7 GHz acoustic wave ladder filter exhibiting insertion loss (IL) of 5.63 dB and 3-dB fractional bandwidth (FBW) of 17.6% is demonstrated, pushing the frequency limits of thin-film piezoelectric acoustic filter technology.…
We demonstrate high-frequency (> 3 GHz), high quality factor radio frequency (RF) resonators in unreleased thin film gallium nitride (GaN) on sapphire and silicon carbide substrates by exploiting acoustic guided mode (Lamb wave) resonances.…