Related papers: In-plane polar domains enhanced energy storage

The sensitivity of ferroelectric domain walls to external stimuli makes them functional entities in nanoelectronic devices. Specifically, optically driven domain reconfiguration with in-plane polarization is advantageous and thus highly…

Since the discovery of ferroelectricity in HfO$_2$ thin films, significant research has focused on Zr-doped HfO$_2$ and solid solution (Hf,Zr)O$_2$ thin films. Functional properties can be further tuned via multilayering, however, this…

SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrode on Si(001). The Hf0.5Zr0.5O2 films show enhanced properties in comparison to equivalent films on SrTiO3(001)…

Polycrystalline lead-free Ba$_{0.85}$Ca$_{0.15}$Zr$_{0.10}$Ti$_{0.90}$O$_3$ (BCZT), BaTi$_{0.89}$Sn$_{0.11}$O$_3$ (BTSn) and 0.4Ba$_{0.85}$Ca$_{0.15}$Zr$_{0.10}$Ti$_{0.90}$O$_3$-0.6BaTi$_{0.89}$Sn$_{0.11}$O$_3$ (0.4BCZT-0.6BTSn)…

Advances in complex oxide heteroepitaxy have highlighted the enormous potential of utilizing strain engineering via lattice mismatch to control ferroelectricity in thin-film heterostructures. This approach, however, lacks the ability to…

The discovery and precise manipulation of atomic-size conductive ferroelectric domain defects, such as geometrically confined walls, offer new opportunities for a wide range of prospective electronic devices, and the so-called walltronics…

The existence of ferroelectricity in {$\mathrm{BiMnO}_3$} has been a long-standing question for both experimentalists and theorists. In addition to a highly distorted bulk structure, the ionic crystal planes cause a large roughness in thin…

Dielectric and antiferroelectric materials are particularly promising for high-power energy-storage applications. However, relatively low energy density greatly hinders their usage in storage technologies. Here, we report…

We report that an energetic plasma process is extremely effective in enlarging the unit cell volume and ferroelectric distortion of the ferroelectric oxides, resulting in a significant increase in its Tc. We demonstrate experimentally that…

Strain engineering of perovskite oxide thin films has proven to be an extremely powerful method for enhancing and inducing ferroelectric behavior. In ferroelectric thin films and superlattices, the polarization is intricately linked to…

The finite screening length by real metallic electrodes, albeit very small (<1A), results in finite depolarizing field that tends to split the film into domains. In very thin ferroelectric films the domain structure reduces to sinusoidal…

Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-effect transistors, low-power logic, and nonvolatile memories. We devised a film with a layered structure of bismuth oxide that can stabilize…

Pb-free ferroelectric thin films are gaining attention due to their applicability in memory, sensor, actuator, and microelectromechanical system. In this work, Na$_{0.4}$K$_{0.1}$Bi$_{0.5}$TiO$_3$ (NKBT0.1) ferroelectric thin films were…

Layered perovskite-based compounds offer a range of unconventional properties enabled by their naturally anisotropic structure. While most renowned for the superconductivity observed in the Ruddlesden-Popper phases, many of these layered…

Ba0.85Ca0.15Zr0.1Ti0.9O3/La0.8Sr0.2MnO3/Ba0.85Ca0.15Zr0.1Ti0.9O3 (BCZT/LSMO/BCZT) sandwich films were elaborated using the sol-gel spin coating process. The dielectric properties displayed excellent thermal stability with the temperature…

We have investigated the crystal structure and the ferroelectric properties of BaTiO3 thin films with YBa2Cu3O7-d as the bottom and Au as the top electrode. Epitaxial heterostructures of YBa2Cu3O7-d and BaTiO3 were prepared by dc and rf…

Room-temperature magnetoelectric multiferroicity has been observed in c-axis oriented GaFeO$_3$ thin films (space group $Pna2_1$), grown on economic and technologically important (100)Si substrates by pulsed laser deposition technique.…

Electric capacitors are commonly used in electronic circuits for short-term storage of small amounts of energy. It is desirable however to use capacitors to store much larger energy amounts to replace rechargeable batteries. Unfortunately,…

Multiferroic BiFeO3 (BFO) thin film exhibiting desired ferroelectric and enhanced magnetic properties was grown on La0.67Sr0.33MnO3 (LSMO) buffered Pt/TiO2/SiO2/Si substrates by off-axis RF magnetic sputtering, where a highly (111)-oriented…

Multiferroic BiFeO$_3$ (BFO) possesses a rich phase diagram that allows strain tuning of its properties in thin-film form. In particular, at large compressive strain, a supertetragonal (T) phase with giant polarization is stabilized over…