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Properties of complex oxide thin films can be tuned over a range of values as a function of mismatch, composition, orientation, and structure. Here, we report a strategy for growing structured epitaxial thermoelectric thin films leading to…

Materials Science · Physics 2013-10-08 D. Pravarthana , O. I. Lebedev , D. Chateigner , S. Hebert , P. A. Salvador , W. Prellier

We report on the epitaxial growth and the characterization of thin FePt films and the subsequent patterning of magnetic lattice structures. These structures can be used to trap ultracold atoms for quantum simulation experiments. We use…

Atomic Physics · Physics 2018-09-28 A. L. La Rooij , S. Couet , M. C. van der Krogt , A. Vantomme , K. Temst , R. J. C. Spreeuw

Epitaxial layers of the topological insulator Bi2Se3 have been grown by molecular beam epitaxy on laterally lattice-matched InP(111)B substrates. High resolution X-ray diffraction shows a significant improvement of Bi2Se3 crystal quality…

Remote epitaxy has garnered considerable attention as a promising method that facilitates the growth of thin films that replicate the crystallographic characteristics of a substrate by utilizing two-dimensional (2D) material interlayers…

Skyrmions are localized magnetic spin textures whose stability has been shown theoretically to depend on material parameters including bulk Dresselhaus spin orbit coupling (SOC), interfacial Rashba SOC, and magnetic anisotropy. Here, we…

Materials Science · Physics 2017-03-31 Adam S. Ahmed , Bryan D. Esser , James Rowland , David W. McComb , Roland K. Kawakami

The superconductor PdTe$_2$ is known to host bulk Dirac bands and topological surface states. The coexistence of superconductivity and topological surface states makes PdTe$_2$ a promising platform for exploring topological…

Zinc-based nitride CaZn2N2 films grown by molecular beam epitaxy (MBE) with a plasma-assisted active nitrogen-radical source are promising candidates of next-generation semiconductors for light-emitting diodes and solar cells. This nitride…

Materials Science · Physics 2019-08-28 Masatake Tsuji , Kota Hanzawa , Hiroyuki Kinjo , Hidenori Hiramatsu , Hideo Hosono

We demonstrate the growth of thin films of molybdenum ditelluride and molybdenum diselenide on sapphire substrates by molecular beam epitaxy. In-situ structural and chemical analyses reveal stoichiometric layered film growth with atomically…

Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work, we report high-quality, crystalline, large-area gallium…

A novel laser molecular beam epitaxy (LMBE) system for the fabrication of atomically controlled oxides superlattices and an x-ray diffractometer that measures spatially-resolved x-ray diffraction spectra have been developed based on the…

Materials Science · Physics 2009-11-11 M. Ohtani , M. Lippmaa , T. Ohnishi , M. Kawasaki

The epitaxial growth of complex oxides enables the production of high-quality films, yet substrate choice is restricted to certain symmetry and lattice parameters, thereby limiting the technological applications of epitaxial oxides. In…

We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen. The use of the precursor overcomes a number of issues…

Materials Science · Physics 2017-10-05 Patrick B. Marshall , Honggyu Kim , Kaveh Ahadi , Susanne Stemmer

We report on the epitaxial growth and surface structure of infinite-layer cuprate Sr1-xNdxCuO2 films on SrTiO3(001) substrates by combining ozone-assisted molecular beam epitaxy and in situ scanning tunneling microscopy. Careful substrate…

Superconductivity · Physics 2020-08-14 Jia-Qi Fan , Shu-Ze Wang , Xue-Qing Yu , Rui-Feng Wang , Yan-Ling Xiong , Can-Li Song , Xu-Cun Ma , Qi-Kun Xue

Control of faceting during epitaxy is critical for nanoscale devices. This work identifies the origins of gaps and different facets during regrowth of InGaAs adjacent to patterned features. Molecular beam epitaxy (MBE) near SiO2 or SiNx led…

Epitaxy forms the basis of modern electronics and optoelectronics. We report coherent atomically-thin superlattices, in which different transition metal dichalcogenide monolayers--despite large lattice mismatches--are repeated and…

Realizing van der Waals (vdW) epitaxy in the 80s represents a breakthrough that circumvents the stringent lattice matching and processing compatibility requirements in conventional covalent heteroepitaxy. However, due to the weak vdW…

Topological insulators (TIs) are exotic materials which have topologically protected states on the surface due to the strong spin-orbit coupling. However, a lack of ordered growth of TI thin films on amorphous dielectrics and/or insulators…

Structural and magnetic properties of Mn5(SixGe1-x)3 thin films were investigated. Ferromagnetic Mn5Ge3 and anti-ferromagnetic Mn5Si3 thin films have been synthesized and characterized as these compounds exhibit interesting features for the…

The recent identification of $\alpha$-MnTe as a candidate altermagnet has attracted considerable interest, particularly for its potential application in magnetic random-access memory. However, the development of high-quality thin films -…

We report growth of superconducting Sr2RuO4 films by oxide molecular beam epitaxy (MBE). Careful tuning of the Ru flux with an electron beam evaporator enables us to optimize growth conditions including the Ru/Sr flux ratio and also to…

Superconductivity · Physics 2019-03-21 M. Uchida , M. Ide , H. Watanabe , K. S. Takahashi , Y. Tokura , M. Kawasaki
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