Related papers: Combustion Behaviour of Single Silicon Particles i…
The oxygen and silicon dynamics in silica is compared via computer simulations. In agreement with experimental data and previous simulations a decoupling of oxygen and silicon dynamics is observed upon cooling. The origin of this decoupling…
The diffusion path and diffusivity of oxygen in crystalline silicon are computed using an empirical interatomic potential which was recently developed for modelling the interactions between oxygen and silicon atoms. The diffusion path is…
It is essential to control the dissolution rate of iron oxide particles for a prospective acidic iron electrowinning process. In this study, the combined influence of temperature (40-80{\deg}C) and short-wavelength light exposure on the…
Silicon together with its native oxide SiO$_2$ was recognized as an outstanding material system for the semiconductor industry in the 1950s. In state-of-the-art device technology, SiO$_2$ is widely used as an insulator in combination with…
The synthesis of Si3N4 nanowires from the reaction of silicon nanoparticles with N2 in the 1200-1440 C temperature range is reported. The nitridation conditions are such that the reaction with nitrogen is favoured by the presence of silicon…
Hydrogen point defects in silicon still hold unsolved problems, whose disclosure is fundamental for future advances in Si technologies. Among the open issues is the mechanism for the condensation of atomic hydrogen into molecules in Si…
The thermal characteristics of silicon between 15 and 300 deg K are investigated by applying a computer program on the solution of the differential heat diffusion equation. The computer model is linked to high-purity silicon through a set…
Having examined the application of quasi-equilibrium to hydrostatic silicon burning in Paper I of this series, Hix & Thielemann (1996), we now turn our attention to explosive silicon burning. Previous authors have shown that for material…
In this paper we present the temperature-dependent emissivity of a silicon sample, estimated from its cool-down curve in a constant low temperature environment ($\approx$ 82K). The emissivity value follow a linear dependency in the 120-260…
We investigate the impact of water, a polar solvent, on the optical absorption of prototypical silicon clusters with oxygen passivation. We approach this complex problem by assessing the contributions of three factors: chemical reactivity;…
Ignition of iron particles in an oxidizing environment marks the onset of a self-sustained combustion. The objective of the current study is to quantitatively examine the ignition characteristics of fine iron particles governed by the…
The RESIK instrument on the CORONAS-F spacecraft obtained solar flare and active region X-ray spectra in four channels covering the wavelength range 3.8 -- 6.1 \AA in its operational period between 2001 and 2003. Several highly ionized…
A theoretical modeling of the oxygen diffusivity in silicon and germanium crystals both at normal and high hydrostatic pressure has been carried out using molecular mechanics, semiempirical and ab initio methods. It was established that the…
Molecular dynamics simulations of SPC/E water confined in a Silica pore are presented. The simulations have been performed at different hydration levels and temperatures to study the single-particle dynamics. Due to the confinement and to…
The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentration (28 - 70 area %) have been studied using Transmission Electron Microscopy (TEM), Energy Filtered TEM (EFTEM) and…
We have made one-dimensional raster-scan observations of the rho Oph and sigma Sco star-forming regions with two spectrometers (SWS and LWS) on board the ISO. In the rho Oph region, [SiII] 35um, [OI] 63um, 146um, [CII] 158um, and the H2…
Reactions of SiO molecules have been postulated to initiate efficient formation of silicate dust particles in outflows around dying (AGB) stars. Both OH radicals and H$_2$O molecules can be present in these environments and their reactions…
The model of hydrogen migration and of the reactions of hydrogen atoms with electrically active impurity, developed earlier, has been applied to simulate hydrogen diffusion and passivation process during plasma deuteration of silicon…
We present a study of the Silicon-bearing species detected in a line confusion limited survey towards Orion KL performed with the IRAM 30-m telescope, which ranges from 80 to 280 GHz. Our aim is to derive physical and chemical conditions…
Molecular hydrogen in silicon has been studied by path-integral molecular dynamics simulations in the canonical ensemble. Finite-temperature properties of these point defects were analyzed in the range from 300 to 900 K. Interatomic…