Related papers: Quantum spin Hall effect in III-V semiconductors a…

The quantum anomalous Hall effect (QAHE), the last member of Hall family, was predicted to exhibit quantized Hall conductivity e2/h without any external magnetic field. The QAHE shares a similar physical phenomenon with the integer quantum…

The quasi-quantized Hall effect (QQHE) is the three-dimensional (3D) counterpart of the integer quantum Hall effect (QHE),exhibited only by two-dimensional (2D) electron systems. It has recently been observed in layered materials,…

In two-dimensional topological insulators, such as inverted HgTe/CdTe quantum wells, helical quantum spin Hall (QSH) states persist even at finite magnetic fields below a critical magnetic field $B_\mathrm{c}$, above which only quantum Hall…

Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities,…

We propose models of two dimensional paramagnetic semiconductors where the intrinsic spin Hall effect is exactly quantized in integer units of a topological charge. The model describes a topological insulator in the bulk, and a "holographic…

We analyze a quantum spin Hall (QSH) device with a point contact connecting two of its edges. The contact supports a net spin tunneling current that can be probed experimentally via a two-terminal resistance measurement. We find that the…

Spin-orbit-torque (SOT) switching using the spin Hall effect (SHE) in heavy metals and topological insulators (TIs) has great potential for ultra-low power magnetoresistive random-access memory (MRAM). To be competitive with conventional…

Topologically nontrivial band structure of a material may give rise to special states that are confined to the material's boundary and protected against disorder and scattering. Quantum spin Hall effect (QSHE) is a paradigmatic example of…

We study the quantum Hall effect (QHE) in the three-dimensional topological insulator HgTe, which features topological Dirac-type surface states in a bulk gap opened by strain. Despite the co-existence of multiple carrier subsystems, the…

The cross-over from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields are studied in the diffusive to quasiballistic and zero-field to quantum Hall regime.…

Incorporating ferromagnetic dopants, such as chromium or vanadium, into thin films of the three-dimensional (3D) topological insulator (TI) (Bi,Sb)2Te3 has recently led to the realisation of the quantum anomalous Hall effect (QAHE), a…

Symmetry breaking in quantum materials is of great importance and can lead to nonreciprocal charge transport. Topological insulators provide a unique platform to study nonreciprocal charge transport due to their surface states, especially…

We study the phase diagram of the inverted InAs/GaSb bilayer quantum wells. For small tunneling amplitude between the layers, we find that the system is prone to formation of an s-wave exciton condensate phase, where the spin-structure of…

Electronic properties like current flow are generally independent of the electron's spin angular momentum, an internal degree of freedom present in quantum particles. The spin Hall effects (SHEs), first proposed 40 years ago, are an unusual…

We present a multi-probe transport analysis that effectively separates bulk and edge currents in large Hall bar devices with standard geometries. Applied to transport measurements on all possible four-probe configurations of six-probe Hall…

Thermoelectric transport of two-dimensional quantum spin Hall systems are theoretically studied in narrow ribbon geometry. We find that at high temperature electrons in the bulk states dominate. By lowering temperature, the "perfectly…

One of the most fascinating challenges in Physics is the realization of an electron-based counterpart of quantum optics, which requires the capability to generate and control single electron wave packets. The edge states of quantum spin…

A large bulk band gap is critical for the applications of quantum spin hall (QSH) insulators in spintronics at room temperature. Based on first-principles calculations, we predict that the methyl-functionalized III-Bi monolayers, namely…

The quantum spin Hall (QSH) effect, characterized by topologically protected spin-polarized edge states, was recently demonstrated in monolayers of the transition metal dichalcogenide (TMD) WTe$_2$. However, the robustness of this…

Topological insulators (TIs) represent a new quantum state of matter characterized by robust gapless states inside the insulating bulk gap. The metallic edge states of a two-dimensional (2D) TI, known as quantum spin Hall (QSH) effect, are…