Topological quantization of the spin Hall effect in two-dimensional paramagnetic semiconductors
Mesoscale and Nanoscale Physics
2009-11-11 v4
Abstract
We propose models of two dimensional paramagnetic semiconductors where the intrinsic spin Hall effect is exactly quantized in integer units of a topological charge. The model describes a topological insulator in the bulk, and a "holographic metal" at the edge, where the number of extended edge states crossing the Fermi level is dictated by (exactly equal to) the bulk topological charge. We also demonstrate the spin Hall effect explicitly in terms of the spin accumulation caused by the adiabatic flux insertion.
Cite
@article{arxiv.cond-mat/0505308,
title = {Topological quantization of the spin Hall effect in two-dimensional paramagnetic semiconductors},
author = {Xiao-Liang Qi and Yong-Shi Wu and Shou-Cheng Zhang},
journal= {arXiv preprint arXiv:cond-mat/0505308},
year = {2009}
}
Comments
the expanded version published on Phys. Rev. B