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The valley degree of freedom is one of the most intriguing properties of atomically thin transition metal dichalcogenides. Together with the possibility to address this degree of freedom by valley-contrasting optical selection rules, it has…

In transition metal dichalcogenides, the valley degree of freedom directly couples valley-polarised excitons - excited by circularly polarised light - to valley-dependent chiral photons, enabling ultrafast light-driven valleytronics.…

Manipulating the valley degree of freedom to encode information for potential valleytronic devices has ignited a new direction in solid-state physics. A significant, fundamental challenge in the field of valleytronics is how to generate and…

Mesoscale and Nanoscale Physics · Physics 2020-07-02 Hui-Ying Mu , Yi-Tong Yao , Jie-Ru Li , Guo-Cai Liu , Chao He , Ying-Jie Sun , Guang Yang , Xing-Tao An , Yong-Zhe Zhang , Jian-Jun Liu

Monolayer (1L) transition metal dichalcogenides (TMDCs) are attractive materials for several optoelectronic applications because of their strong excitonic resonances and valley-selective response. Valley excitons in 1L-TMDCs are formed at…

Optics · Physics 2018-05-30 Alex Krasnok , Andrea Alu

The optical properties of monolayer transition metal dichalcogenides are dominated by tightly-bound excitons. They form at distinct valleys in reciprocal space, and can interact via the valley-exchange coupling, modifying their dispersion…

In monolayer transition metal dichalcogenides time-reversal symmetry, combined with space-inversion symmetry, defines the spin-valley degree of freedom. As such, engineering and control of time-reversal symmetry by optical or magnetic…

Monolayer transition metal dichalcogenides have attracted great attentions for potential applications in valleytronics. However, the valley polarization degree is usually not high because of the intervalley scattering. Here, we demonstrate…

Materials Science · Physics 2023-02-23 Jianchen Dang , Mingwei Yang , Xin Xie , Zhen Yang , Danjie Dai , Zhanchun Zuo , Can Wang , Kuijuan Jin , Xiulai Xu

Semiconducting transition metal dichalcogenide monolayers have emerged as promising candidates for future valleytronics-based quantum information technologies. Two distinct momentum-states of tightly-bound electron-hole pairs in these…

Mesoscale and Nanoscale Physics · Physics 2017-03-16 Gerd Plechinger , Tobias Korn , John M. Lupton

Transition metal dichalcogenide semiconductors represent elementary components of layered heterostructures for emergent technologies beyond conventional opto-electronics. In their monolayer form they host electrons with quantized circular…

Optical properties of semiconducting monolayer transition metal dichalcogenides have received a lot of attention in recent years, following the discovery of the valley selective optical population of either $K_{+}$ or $ K_{-}$ valleys at…

Other Condensed Matter · Physics 2022-05-17 Andrey Geondzhian , Angel Rubio , Massimo Altarelli

Valleytronics using two-dimensional materials opens unprecedented opportunities for information processing with the valley polarizer being a basic building block. Paradigms such as strain engineering, the inclusion of line defects, and the…

Mesoscale and Nanoscale Physics · Physics 2023-06-07 Shrushti Tapar , Bhaskaran Muralidharan

The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such…

Mesoscale and Nanoscale Physics · Physics 2016-09-06 Oriol Lopez Sanchez , Dmitry Ovchinnikov , Shikhar Misra , Adrien Allain , Andras Kis

Single layers of transition metal dichalcogenides (TMDs) are direct gap semiconductors with nondegenerate valley indices. An intriguing possibility for these materials is the use of their valley index as an alternate state variable. Several…

Monolayer transition metal dichalcogenides feature tightly bound bright excitons at the degenerate valleys, where electron-hole Coulomb exchange interaction strongly couples the valley pseudospin to the momentum of exciton. Placed on…

Mesoscale and Nanoscale Physics · Physics 2022-06-01 Xu-Chen Yang , Hongyi Yu , Wang Yao

Valley polarization is amongst the most critical attributes of atomically thin materials. However, achieving a high contrast from monolayer transition metal dichalcogenides (TMDs) has so far been challenging. In this work, a giant valley…

The selective control of specific momentum valleys lies at the core of valleytronics, a field that has thus far focused primarily on the $\mathbf{K}$ and $\mathbf{K'}$ valleys in transition metal dichalcogenides (TMDs). However, direct…

Strongly Correlated Electrons · Physics 2026-05-05 Youngjae Kim

The valleys of two-dimensional transition metal dichalcogenides (TMDCs) offer a new degree of freedom for information processing. To take advantage of this valley degree of freedom, on one hand, it is feasible to control valleys by…

Monolayer transition metal dichalcogenides are promising materials for valleytronic operations. They exhibit two inequivalent valleys in the Brillouin zone, and the valley populations can be directly controlled and determined using…

Mesoscale and Nanoscale Physics · Physics 2017-09-29 Kathleen M. McCreary , Marc Currie , Aubrey T. Hanbicki , Hsun-Jen Chuang , Berend T. Jonker

Valley degree of freedom besides spin is a promising candidate as a carrier of information. Spintronics has come a long way and spin modulation can be realized by quantum interference and spin-orbit coupling effect. However, the control of…

Mesoscale and Nanoscale Physics · Physics 2025-08-08 Hui-Ying Mu , Nie-Wei Wang , Ying-Na Du , Xing-Tao An , Jian-Jun Liu

Valleytronics is one of the breaking-through to the technology of electronics, which provides a new degree of freedom to manipulate the properties of electrons. Combining DFT calculations, optical absorption analysis and the linear…

Materials Science · Physics 2017-08-16 Tiantian Zhang , Sijie Zhang , Gang Xu , Nanlin Wang , Zhong Fang
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