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Related papers: Ge as an orbitronic platform: giant orbital Hall e…

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Traditional view of the anomalous Hall effect~(AHE) in ferromagnets is that it arises from the magnetization perpendicular to the measurement plane and that there is a linear dependence on the latter. Underlying such a view is the thinking…

Materials Science · Physics 2024-08-19 Zheng Liu , Mengjie Wei , Dazhi Hou , Yang Gao , Qian Niu

We report a giant spin Hall effect (SHE) in {\beta}-Ta that generates spin currents intense enough to induce efficient spin-transfer-torque switching of ferromagnets, thereby providing a new approach for controlling magnetic devices that…

Materials Science · Physics 2015-06-04 Luqiao Liu , Chi-Feng Pai , Y. Li , H. W. Tseng , D. C. Ralph , R. A. Buhrman

The magnetorotational instability (MRI) is the most promising mechanism by which angular momentum is efficiently transported outwards in astrophysical discs. However, its application to protoplanetary discs remains problematic. These discs…

Earth and Planetary Astrophysics · Physics 2015-06-16 Matthew W. Kunz , Geoffroy Lesur

Conventional topological Hall effects (THE) require conducting magnets, leaving insulating systems largely inaccessible. Here we introduce the interfacial topological Hall effect (ITHE), where the noncoplanar spin textures of insulating…

Topologically protected spin states hold great promise for applications in next generation of memory circuits and spintronic devices. These intriguing textures typically emerge in bulk materials or heterostructures with broken inversion…

We systematically measured the Hall effect in the extremely large magnetoresistance semimetal WTe$_2$. By carefully fitting the Hall resistivity to a two-band model, the temperature dependencies of the carrier density and mobility for both…

Strongly Correlated Electrons · Physics 2015-11-09 Yongkang Luo , H. Li , Y. M. Dai , H. Miao , Y. G. Shi , H. Ding , A. J. Taylor , D. A. Yarotski , R. P. Prasankumar , J. D. Thompson

Efficiently manipulating the magnetization of van der Waals ferromagnets has attracted considerable interest in developing room-temperature two-dimensional material-based memory and logic devices. Here, taking advantage of the unique…

Electrical control of the orbital degrees of freedom is an important area of research in the emerging field of "orbitronics." Orbital {\it gyrotropic} magneto-electric effect (OGME) is the generation of an orbital magnetization in a…

Mesoscale and Nanoscale Physics · Physics 2020-11-17 Sayantika Bhowal , S. Satpathy

Gapped graphene has been proposed to be a good platform to observe the valley Hall effect, a transport phenomenon involving the flow of electrons that are characterized by different valley indices. In the present work, we show that this…

Mesoscale and Nanoscale Physics · Physics 2021-05-19 Sayantika Bhowal , Giovanni Vignale

As one of paradigmatic phenomena in condensed matter physics, the quantum anomalous Hall effect (QAHE) in stoichiometric Chern insulators has drawn great interest for years. By using model Hamiltonian analysis and first-principle…

Mesoscale and Nanoscale Physics · Physics 2019-09-04 Hongyi Sun , Bowen Xia , Zhongjia Chen , Yingjie Zhang , Pengfei Liu , Qiushi Yao , Hong Tang , Yujun Zhao , Hu Xu , Qihang Liu

We report an efficient numerical approach to compute the different components of the orbital Hall responses in disordered topological materials from the Berry phase theory of magnetization. The theoretical framework is based on the…

Mesoscale and Nanoscale Physics · Physics 2024-10-30 Luis M. Canonico , Jose H. García , Stephan Roche

The orbital angular momentum is a core ingredient of orbital magnetism, spin Hall effect, giant Rashba spin splitting, orbital Edelstein effect, and spin-orbit torque. However, its experimental detection is tricky. In particular, direct…

The optical spin Hall effect (OSHE) is a transport phenomenon of exciton polaritons in semiconductor microcavities, caused by the polaritonic spin-orbit interaction, that leads to the formation of spin textures. In the semiconductor cavity,…

A new mechanism of spin structure-driven anomalous Hall effect (AHE) in tilted ferromagnetic metals is proposed by taking account of the d-orbital degree of freedom. We find that a conduction electron acquires a Berry phase due to the…

Strongly Correlated Electrons · Physics 2009-09-14 Takeshi Tomizawa , Hiroshi Kontani

The electronic structure of WTe2 bulk and layers are investigated by using the first principles calculations. The perfect electron-hole (n-p) charge compensation and high carrier mobilities are found in WTe2 bulk, which may result in the…

Mesoscale and Nanoscale Physics · Physics 2015-06-11 H. Y. Lv , W. J. Lu , D. F. Shao , Y. Liu , S. G. Tan , Y. P. Sun

Recent progress in orbitronics reveals the possibility of using orbit current as an information carrier. The interconversion between orbit currents and charge currents is crucial for orbit information processing. Although orbit currents can…

Mesoscale and Nanoscale Physics · Physics 2023-03-10 Yong Xu , Fan Zhang , Yongshan Liu , Renyou Xu , Yuhao Jiang , Houyi Cheng , Albert Fert , Weisheng Zhao

The electrical Hall effect can be significantly enhanced through the interplay of the conduction electrons with magnetism, which is known as the anomalous Hall effect (AHE). Whereas the mechanism related to band topology has been…

Orbital torque, associated with orbital current, enables light metals to efficiently manipulate magnetization with rich tunability. A clear demonstration of perpendicular magnetization switching using light metals alone is essential for…

Materials Science · Physics 2024-10-04 Teng Xu , Aihua Tang , Kang Wang , Yizhou Liu , Haifeng Du

Coupling between charge and spin, and magnetoelectric effects more generally, have been an area of great interest for several years, with the sought-after ability to control magnetic degrees of freedom via charge currents serving as an…

Strongly Correlated Electrons · Physics 2019-08-21 Geremia Massarelli , Bryce Wu , Arun Paramekanti

Ge two-dimensional hole gases in strained modulation-doped quantum-wells represent a promising material platform for future spintronic applications due to their excellent spin transport properties and the theoretical possibility of…

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