Related papers: Barrier Electrostatics and Contact Engineering for…

We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal-insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency applications. We find that the integration of gate…

We demonstrate high-performance UWBG AlGaN PolFETs exhibiting a state-of-the-art combination of nearly 1 A/mm on-state current (~ 960 mA/mm) and large breakdown field (> 4.8 MV/cm) in high carrier density (1.15 x 1013 cm-2). Multi-kV…

We report the design and demonstration of ultra-wide-bandgap (UWBG) AlGaN polarization-graded field-effect transistors (PolFETs) that achieve a current-gain cutoff frequency above 85 GHz and a current density exceeding 1.3 A/mm. Ultra-thin…

We report on energy bands and breakdown characteristics of Al2O3 dielectrics on ultra-wide bandgap (UWBG) AlGaN heterostructures. Metal-dielectric-semiconductor structures are important to sustain high fields needed for future…

We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFET) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV)…

Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offering a tunable bandgap from 3.4 eV (GaN) to 6.1 eV (AlN) and…

We report on the heterostructure and interfacial engineering of metalorganic chemical vapor deposition (MOCVD) grown reverse-graded contacts to ultra-wide bandgap AlGaN. A record low contact resistivity of 1.4 x 10-6 Ohm.cm2 was reported on…

To meet the growing demands of advanced electronic systems, next-generation power and RF semiconductor devices must operate efficiently at higher power levels and switching frequencies while remaining compact. Current state-of-the-art GaN…

Next-generation high-power radio-frequency (RF) devices increasingly demand transistors that operate efficiently with high gain at high frequencies. High-aluminum-content ultra-wide-bandgap (UWBG) AlGaN alloys have shown great potential for…

In this letter, we design and demonstrate an improved MOCVD grown reverse Al-composition graded contact layer to achieve low resistance contact to MOCVD grown ultra-wide bandgap (UWBG) Al0.70Ga0.30N channel metal semiconductor field-effect…

We report on the design and demonstration of ultra-wide bandgap AlGaN polarization-graded field effect transistors with ultra-thin channels to enable excellent current density and high-frequency performance while significantly reducing…

High Electron Mobility Transistors (HEMTs) are most suitable for harsh environments as they operate reliably under extreme conditions such as high voltages, high temperatures, radiation exposure and corrosive atmospheres. In this article,…

Ultra-wide bandgap (UWBG) materials such as AlN and BN hold great promise for future power electronics due to their exceptional properties. They exhibit large bandgaps, high breakdown fields, high thermal conductivity, and high mechanical…

Ultrawide bandgap (UWBG) semiconductors exhibit exceptional electrical and thermal properties, offering strong potential for high power and high frequency electronics. However, efficient doping in UWBG materials is typically limited to…

The performance of ultra-wide band gap materials like $\beta$-Ga$_\mathrm{2}$O$_\mathrm{3}$ is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate…

Ultra-wide bandgap (UWBG) semiconductors promise to revolutionize power electronics, yet a fundamental understanding of their interfacial electronic structure has been hindered by the absence of direct experimental observation. Here, we…

We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility…

In this paper we report a novel ohmic contact formation scheme for Extreme Bandgap (EBG) AlxGa1-xN (x>0.6) channel HEMTs with undoped barrier layers. Our approach consists of using a new low temperature (LT) pulsed metal-organic chemical…

We demonstrate graded AlGaN/GaN heterojunction bipolar transistors (HBTs) with selective injection of minority carriers across a p-GaN base and patterned regrown base contacts. The selective injection design regulates minority carrier…

Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an order of magnitude higher than conventional silicon electronics.…