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We propose a new DRAM-based true random number generator (TRNG) that leverages DRAM cells as an entropy source. The key idea is to intentionally violate the DRAM access timing parameters and use the resulting errors as the source of…
We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect,…
The probability switching characteristics in spin transfer torque magnetic tunnel junctions (STT-MTJs) are simulated by considering thermal noise using a spin-circuit module. Thermal noise significantly affects the probability switching for…
We investigate switching of magnetic tunnel junctions (MTJs) driven by the thermal effect of the transport current through the junctions. The switching occurs in a specially designed composite free layer, which acts as one of the MTJ…
Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA).…
Three-terminal magnetic tunnel junction (MTJ), where non-volatile magnetization state can be switched via spin orbit torque (SOT), is attracting massive research interests since it is featured by high speed, low power, nearly unlimited…
Power consumption is the main limitation in the development of new high performance random access memory for portable electronic devices. Magnetic RAM (MRAM) with CoFeB/MgO based magnetic tunnel junctions (MTJs) is a promising candidate for…
Hardware implementations of the Ising model offer promising solutions to large-scale optimization tasks. In the literature, various nanodevices have been shown to emulate the spin dynamics for such Ising machines with remarkable…
Magnetic tunnel junction (MTJ)-based magnetic random-access memory (MRAM) is a promising platform for neuromorphic and in-memory computing owing to its non-volatility, high endurance, fast switching dynamics and CMOS compatibility. However,…
Spin-resolved electron symmetry filtering is a key mechanism behind giant tunneling magnetoresistance (TMR) in Fe/MgO/Fe and similar magnetic tunnel junctions (MTJs), providing room temperature functionality in modern spin electronics.…
Recent advances in predictive data analytics and ever growing digitalization and connectivity with explosive expansions in industrial and consumer Internet-of-Things (IoT) has raised significant concerns about security of people's…
Nitrogen-vacancy (NV) centers, atomic spin defects in diamond, represent an active contender for advancing transformative quantum information science (QIS) and innovations. One of the major challenges for designing NV-based hybrid systems…
We present a low barrier magnet based compact hardware unit for analog stochastic neurons and demonstrate its use as a building-block for neuromorphic hardware. By coupling circular magnetic tunnel junctions (MTJs) with a CMOS based analog…
Present information and communication technologies are largely based on electronic devices, which suffer from heat generation and high power consumption. Alternatives like spintronics and magnonics, which harness the spin degree of freedom,…
To increase the number of wireless devices, e.g., mobile or IoT terminals, cryptosystems are essential for secure communications. In this regard, random number generation is crucial because the appropriate function of cryptosystems relies…
Spin-orbit torque (SOT) based magnetic random access memory (MRAM) is envisioned as an emerging non-volatile memory due to its ultra-high speed and low power consumption. The field-free switching schema in SOT devices is of great interest…
Magnetic tunnel junctions are nanoscale devices which have recently attracted interested in the context of frequency multiplexed spintronic neural networks, due to their interesting dynamical properties, which are defined during the…
Memory devices operating due to the fast proton transfer (PT) process are proposed by means of the first-principles calculations. Writing an information is performed using the electrostatic potential of the scanning tunneling microscopy…
Random number generators (RNG) are essential elements in many cryptographic systems. True random number generators (TRNG) rely upon sources of randomness from natural processes such as those arising from quantum mechanics phenomena. We…
The domain wall-magnetic tunnel junction (DW-MTJ) is a versatile device that can simultaneously store data and perform computations. These three-terminal devices are promising for digital logic due to their nonvolatility, low-energy…