Related papers: Persistent Interfacial Topological Hall Effect Dem…

Three-dimensional topological insulators (TIs) have emerged as a unique state of quantum matter and generated enormous interests in condensed matter physics. The surfaces of a three dimensional (3D) TI are composed of a massless Dirac cone,…

Topological spin textures as an emerging class of topological matter offer a medium for information storage and processing. The recently discovered topological Hall effect (THE) is considered as a fingerprint for electrically probing…

The topological Hall effect (THE) is a hallmark of a non-trivial geometric spin arrangement in a magnetic metal, originating from a finite scalar spin chirality (SSC). The associated Berry phase is often a consequence of non-coplanar…

Nontrivial band topology along with magnetism leads to different novel quantum phases. When time-reversal-symmetry is broken in three-dimensional topological insulators (TIs) by applying high enough magnetic field or proximity effect,…

Manipulation of magnetic ground states by effective control of competing magnetic interactions has led to the finding of many exotic magnetic states. In this direction, the tetragonal Heusler compounds consisting of multiple magnetic…

Nonlinear Hall effect (NHE) can originate from the quantum metric mechanism in antiferromagnetic topological materials with PT symmetry, which has been experimentally observed in MnBi2Te4. In this work, we propose that breaking PT symmetry…

We study the effect of spin-momentum locking inhomogeneity on the planar Hall effect in topological insulators (TIs). Using the minimal model describing surface states of 3D TIs and semiclassical Boltzmann formalism, we have derived the…

The spin Hall effect (SHE) allows efficient generation of spin polarization or spin current through charge current and plays a crucial role in the development of spintronics. While SHE typically occurs in non-magnetic materials and is…

We consider a thin film of a topological insulator (TI) sandwiched between two ferromagnetic (FM) layers. The system is additionally under an external gate voltage. The surface electron states of TI are magnetized due to the magnetic…

Despite many years of efforts, attempts to reach the quantum regime of topological surface states (TSS) on an electrically tunable topological insulator (TI) platform have so far failed on binary TI compounds such as Bi2Se3 due to high…

Precise estimation of spin Hall angle as well as successful maximization of spin-orbit torque (SOT) form a basis of electronic control of magnetic properties with spintronic functionality. Until now, current-nonlinear Hall effect, or second…

Band inversion is a known feature in a wide range of topological insulators characterized by a change of orbital type around a high-symmetry point close to the Fermi level. In some cases of band inversion in topological insulators, the…

We report the first electrical manipulation and detection of the mesoscopic intrinsic spin-Hall effect (ISHE) in semiconductors through non-local electrical measurement in nano-scale H-shaped structures built on high mobility HgTe/HgCdTe…

In-plane anomalous Hall effect (IPAHE) is an unconventional anomalous Hall effect (AHE) with the Hall current flows in the plane spanned by the magnetization or magnetic field and the electric field. Here,we predict a stable two-dimensional…

The quantum anomalous Hall effect (QAHE) has been recently demonstrated in Cr- and V-doped three-dimensional topological insulators (TIs) at temperatures below 100 mK. In those materials, the spins of unfilled d-electrons in the transition…

The topological Hall effect, driven by the exchange interaction between conduction electrons and topological magnetic textures such as skyrmions, is a powerful probe for investigating the topological properties of magnetic materials.…

We report interfacial transport properties in in-situ grown orthorhombic perovskite oxide heterostructures consisting of an antiferromagnetic insulator DyFeO$_3$ and a paramagnetic conductor CaRuO$_3$. We observe Hall effect with a…

The dependence of the spin-pumping effect on the yttrium iron garnet (Y3Fe5O12, YIG) thickness detected by the inverse spin Hall effect (ISHE) has been investigated quantitatively. Due to the spin-pumping effect driven by the magnetization…

An electron moving in a magnetically ordered background feels an effective magnetic field that can be both stronger and more rapidly varying than typical externally applied fields. One consequence is that insulating magnetic materials in…

Magnetic devices are a leading contender for implementing memory and logic technologies that are nonvolatile, that can scale to high density and high speed, and that do not suffer wear-out. However, widespread applications of magnetic…