Related papers: Physical origin of current-induced switching angle…
Ferrimagnetic insulators (FiMI) have been intensively used in microwave and magneto-optical devices as well as spin caloritronics, where their magnetization direction plays a fundamental role on the device performance. The magnetization is…
While early magnetic memory designs relied on magnetization switching by locally generated magnetic fields, key insights in condensed matter physics later suggested the possibility to do it electrically. In the 1990s, Slonczewzki and Berger…
Motivated by recent progress in employing two key classes of two-dimensional materials-topological insulators and transition-metal dichalcogenides (TMDCs)-as spin sources for generating spin-orbit torque (SOT), we investigate…
Spin torques play a crucial role in operative properties of modern spintronic devices. To study current-driven magnetization dynamics, spin-torque terms providing the action of spin-polarized currents have previously often been added in a…
In this article we analyze by modeling two possible mechanisms for magnetization switching using spin orbit torques, which have been reported to cause field-free deterministic switching in experiments. Here we compare the field-free…
We demonstrate efficient current induced spin orbit torque switching in perpendicularly magnetized epitaxial MgO(001)//Pd/Co2FeAl/MgO heterostructures grown by magnetron sputtering. The advantage of such heterostructures for spin orbit…
Current induced domain wall (DW) motion in perpendicularly magnetized nanostripes in the presence of spin orbit torques is studied. We show using micromagnetic simulations that the direction of the current induced DW motion and the…
The magnetization manipulation by spin-orbit torques (SOTs) in nonmagnetic-metal (NM)/ferromagnet (FM) heterostructures has provided great opportunities for spin devices. Besides the conventional spin Hall effect (SHE) in heavy metals with…
Spin-orbit torque (SOT) enables efficient current-driven control of magnetization, offering a promising pathway toward low-power spintronic devices. However, the origin and propagation of both damping-like (DL) and field-like (FL) SOTs in…
This study explores the mechanisms of spin-orbit torque (SOT) switching in ferromagnetic semiconductors (FMS) with perpendicular magnetic anisotropy (PMA), emphasizing the impact of symmetry-breaking. Using micromagnetic simulations based…
Spintronics-based nonvolatile components in neuromorphic circuits offer the possibility of realizing novel functionalities at low power. Current-controlled electrical switching of magnetization is actively researched in this context.…
The main obstacles in realizing diluted magnetic oxide (DMO) in spintronics are the unknown electronic structures associated with its high TC ferromagnetism and spin polarized current and how to manipulate desired electronic structures by…
Spin current plays a central role in spintronics for driving exotic spin-dependent phenomena and high-performance device applications. Recently, a magnetic spin Hall effect has been discovered in spin-split antiferromagnets including…
Spin-orbit torque (SOT) enables efficient electrical control of magnetization, offering a pathway towards low-power spintronic devices. Magnetic topological insulators (TIs), with spin-momentum-locked surface states and intrinsic…
Electrical currents at the surface or edge of a topological insulator are intrinsically spin-polarized. We show that such surface/edge currents can be used to switch the orientation of a molecular magnet weakly coupled to the surface or…
We consider the spin torque induced by a current flowing ballistically through a magnetic domain wall. In addition to a global pressure in the direction of the electronic flow, the torque has an internal structure of comparable magnitude…
Increasing dampinglike spin-orbit torque (SOT) is both of fundamental importance for enabling new research into spintronics phenomena and also technologically urgent for advancing low-power spin-torque memory, logic, and oscillator devices.…
Spin-orbit torques (SOTs) from transition metal oxides (TMOs) in conjunction with magnetic materials have recently attracted tremendous attention for realizing high-efficient spintronic devices. SrRuO3 is a promising candidate among TMOs…
Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It has been recently shown that…
Spintronic devices, such as non-volatile magnetic random access memories and logic devices, have attracted considerable attention as potential candidates for future high efficient data storage and computing technology. In a heavy metal or…