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Related papers: Depth Profiling of Oxygen Migration in Ta/HfO2 Sta…

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A number of electronic devices involve metal/oxide interfaces in their structure where the oxide layer plays the role of electrical insulator. As the downscaling of devices continues, the oxide thickness can spread over only a few atomic…

Materials Science · Physics 2017-04-26 Eric Tea , Jianqiu Huang , Guanchen Li , Celine Hin

An interface between an oxide and an electrolyte gives rise to various processes as exemplified by electrostatic charge accumulation/depletion and electrochemical reactions such as intercalation/decalation under electric field. Here we…

Materials Science · Physics 2016-08-12 Shinichi Nishihaya , Masaki Uchida , Yusuke Kozuka , Yoshihiro Iwasa , Masashi Kawasaki

The 2-dimensional electron system at the interface between LaAlO$_{3}$ and SrTiO$_{3}$ has several unique properties that can be tuned by an externally applied gate voltage. In this work, we show that this gate-tunability extends to the…

Strongly Correlated Electrons · Physics 2017-03-15 A. E. M. Smink , J. C. de Boer , M. P. Stehno , A. Brinkman , W. G. van der Wiel , H. Hilgenkamp

Voltage control of magnetism through electric field-induced oxygen motion (magneto-ionics) could represent a significant breakthrough in the pursuit for new strategies to enhance energy efficiency in a large variety of magnetic devices,…

Herein, we reported giant tunability of the physical properties of 2DEGs at the spinel/perovskite interface of {\gamma}-Al2O3/SrTiO3 (GAO/STO). By modulating the carrier density thus the band filling with ionic-liquid gating, the system…

We present a new approach of back gate patterning that is compatible with the requirements of highest mobility molecular beam epitaxy. Contrary to common back gating techniques, our method is simple, reliable and can be scaled up for entire…

Mesoscale and Nanoscale Physics · Physics 2016-04-20 Matthias Berl , Lars Tiemann , Werner Dietsche , Helmut Karl , Werner Wegscheider

Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in-operando x-ray absorption spectromicroscopy and is used to microphysically describe accelerated evolution of conduction channel and device…

In order to clarify the physics of the gating of solids by ionic liquids (ILs) we have gated lightly doped $p$-Si, which is so well studied that it can be called the "hydrogen atom of solid state physics" and can be used as a test bed for…

Mesoscale and Nanoscale Physics · Physics 2015-08-26 J. Nelson , K. V. Reich , M. Sammon , B. I. Shklovskii , A. M. Goldman

Motivated by the existence of superconductivity in pyrite-structure CuS$_2$, we explore the possibility of ionic-liquid-gating-induced superconductivity in the proximal antiferromagnetic Mott insulator NiS$_2$. A clear gating-induced…

Alloying of In/Zn oxides with various X atoms stabilizes the IXZO structures but generates electron traps in the compounds, degrading the electron mobility. To assess whether the latter is linked to the oxygen affinity or the ionic radius,…

Mesoscale and Nanoscale Physics · Physics 2014-12-25 Mohammed Benwadih , J. A. Chroboczek , Gerard Ghibaudo , Romain Coppard , Dominique Vuillaume

High Frequency (GW) Post Processing of Transparent Conductive Oxide, ITO, leads to a significant improvement of Optical Transmission and Electrical Conduction. This is also true in case of ITO films in multilayered structures. The…

Materials Science · Physics 2013-10-11 Wahid Shams-Kolahi , Nazir P. Kherani

Thermoelectric measurements detect the asymmetry between the density of states above and below the chemical potential in a material. It provides insights into small variations in the density of states near the chemical potential,…

Materials Science · Physics 2020-05-14 Hui Xing , Peihong Zhang , Hao Zeng

In this work, we report high-performance atomic-layer-deposited indium oxide (In2O3) transistors with high gated-Hall mobility ({\mu}H) exceeding 100 cm2/Vs at room temperature (RT). It is found that the deposition of top hafnium oxide…

Materials Science · Physics 2025-10-20 Chen Wang , Kai Jiang , Jinxiu Zhao , Ziheng Wang , Guilei Wang , Chao Zhao , Mengwei Si

Magneto-ionics has emerged as a promising approach to manipulate magnetic properties, not only by drastically reducing power consumption associated with electric current based devices but also by enabling novel functionalities. To date,…

The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of multiple orbital populations, tailoring the interfacial…

Controlling the insulator-metal transition (IMT) in correlated oxide system through oxygen vacancy ordering opens up a new paradigm for exploring exotic structural transformation and physical functionality. Oxygen vacancy serves as a…

Materials Science · Physics 2025-12-19 Xuanchi Zhou , Xiaohui Yao , Xiaomei Qiao , Jiahui Ji , Guowei Zhou , Huihui Ji , Xiaohong Xu

In Bi$_2$Te$_2$Se, the period of quantum oscillations arising from surface Dirac fermions can be increased 6-fold using ionic liquid gating. At large gate voltages, the Fermi energy reaches the $N$ = 1 Landau level in a 14-Tesla field. This…

Mesoscale and Nanoscale Physics · Physics 2013-07-24 Jun Xiong , Yuehaw Khoo , Shuang Jia , R. J. Cava , N. P. Ong

Magnetic separation has emerged as an eco-friendly and sustainable technique with applications in water purification, chemical separation, biochemical, medical, and mining. In this study, we present, a combined experimental and theoretical…

Materials Science · Physics 2025-03-25 Prateek Benhal , Muhammad Garba , Jamel Ali , Theo Siegrist , Munir Humayun , Hadi Mohammadigoushki

Electrolyte gating using ionic liquid electrolytes has recently generated considerable interest as a method to achieve large carrier density modulations in a variety of materials. In noble metal thin films, electrolyte gating results in…

Materials Science · Physics 2016-03-29 Trevor A Petach , Menyoung Lee , Ryan Davis , Apurva Mehta , David Goldhaber-Gordon

We develop a robust and versatile platform to define nanostructures at oxide interfaces via patterned top gates. Using LaAlO$_3$/SrTiO$_3$ as a model system, we demonstrate controllable electrostatic confinement of electrons to nanoscale…

Mesoscale and Nanoscale Physics · Physics 2015-04-10 Srijit Goswami , Emre Mulazimoglu , Lieven M. K. Vandersypen , Andrea D. Caviglia