Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors

Suhas Kumar; Catherine E. Graves; John Paul Strachan; Emmanuelle Merced Grafals; Arthur L. David Kilcoyne; Tolek Tyliszczak; Johanna Nelson Weker; Yoshio Nishi; R. Stanley Williams

doi:10.1002/adma.201505435

Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors

Materials Science 2016-02-08 v2 Mesoscale and Nanoscale Physics

Authors: Suhas Kumar , Catherine E. Graves , John Paul Strachan , Emmanuelle Merced Grafals , Arthur L. David Kilcoyne , Tolek Tyliszczak , Johanna Nelson Weker , Yoshio Nishi , R. Stanley Williams

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Abstract

Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in-operando x-ray absorption spectromicroscopy and is used to microphysically describe accelerated evolution of conduction channel and device failure. The resulting ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-activated oxygen migration that has been under question lately.

Keywords

oxygen migration tantalum oxide memristors in-operando spectroscopy conduction channel thermophoretic forces Fick diffusion

Cite

@article{arxiv.1602.01204,
  title  = {Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors},
  author = {Suhas Kumar and Catherine E. Graves and John Paul Strachan and Emmanuelle Merced Grafals and Arthur L. David Kilcoyne and Tolek Tyliszczak and Johanna Nelson Weker and Yoshio Nishi and R. Stanley Williams},
  journal= {arXiv preprint arXiv:1602.01204},
  year   = {2016}
}

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7 pages, Advanced Materials (2016); updated abstract

Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors

Abstract

Keywords

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