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Secondary Ions Mass Spectroscopy and Hall effect measurements were performed on boron doped silicon with concentration between 0.02 at.% and 12 at.%. Ultra-high boron doping was made by saturating the chemisorption sites of a Si wafer with…
We propose a scheme for scalable and robust quantum computing on two-dimensional arrays of qubits with fixed longitudinal coupling. This opens the possibility for bypassing the device complexity associated with tunable couplers required in…
With qubit measurement and control fidelities above the threshold of fault-tolerance, much attention is moving towards the daunting task of scaling up the number of physical qubits to the large numbers needed for fault tolerant quantum…
Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at…
Dispersed impurities in diamond present a flourishing platform for research in quantum informatics, spintronics and single phonon emitters. Based on the vast pool of experimental and theoretical work describing impurity atoms in diamond, we…
Controlling doping is essential for a successful integration of semiconductor materials into device technologies. However, the assessment of doping levels and the distribution of charge carriers in carbon nanotubes or other nanoscale…
Recent demonstrations using electron spins stored in quantum dots array as qubits are promising for developing a scalable quantum computing platform. An ongoing effort is therefore aiming at the precise control of the quantum dots…
Boson sampling is a sub-universal model used to show quantum speed-up. However, the methods of validation to prove quantum speedup are not robust and accurate. All verification methods involve additional or little studied assumptions. Here,…
As an alternative to commonly used electrical methods, we have investigated the optical pumping of charged exciton complexes addressing impurity related transitions with photons of the appropriate energy. Under these conditions, we…
We propose a scheme for realizing the scalable quantum computation based on nonidentical quantum dots trapped in a single-mode waveguide. In this system, the quantum dots simultaneously interact with a large detuned waveguide and classical…
We suggest an architecture for quantum computing with spin-pair encoded qubits in silicon. Electron-nuclear spin-pairs are controlled by a dc magnetic field and electrode-switched on and off hyperfine interaction. This digital processing is…
Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here we report the characterization of a quantum…
We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus doped regions. Each dot contains approximately 600 phosphorus atoms and has a diameter close to 30 nm. On application of a…
Black silicon (BSi) is a synthetic nanomaterial with high aspect ratio nano protrusions inducing several interesting properties such as a very large absorptivity of incident radiation. We have recently shown that heavily doping the BSi in…
Silicon quantum computing has the potential to revolutionize technology with capabilities to solve real-life problems that are computationally complex or even intractable for modern computers [1] by offering sufficient high quality qubits…
We show that a scanning capacitance microscope (SCM) can image buried delta-doped donor nanostructures fabricated in Si via a recently developed atomic-precision scanning tunneling microscopy (STM) lithography technique. A critical…
Full connectivity of qubits is necessary for most quantum algorithms, which is difficult to directly implement on Noisy Intermediate-Scale Quantum processors. However, inserting swap gate to enable the two-qubit gates between uncoupled…
As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer doping of SiGe heterostructures. To preserve the substrate structure…
The band gap engineering of group IV semiconductors has not been well explored theoretically and experimentally, except for SiGe. Recently, GeSn has attracted much attention due to the possibility of obtaining a direct band gap in this…
Triple donor devices have the potential to exhibit adiabatic tunneling via the CTAP (Coherent Tunneling Adiabatic Passage) protocol which is a candidate transport mechanism for scalable quantum computing. We examine theoretically the…