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Given the effectiveness of semiconductor devices for classical computation one is naturally led to consider semiconductor systems for solid state quantum information processing. Semiconductors are particularly suitable where local control…

Materials Science · Physics 2009-11-11 A. M. Tyryshkin , J. J. L. Morton , S. C. Benjamin , A. Ardavan , G. A. D. Briggs , J. W. Ager , S. A. Lyon

We propose a practical, scalable, and efficient scheme for quantum computation using spatially separated matter qubits and single photon interference effects. The qubit systems can be NV-centers in diamond, Pauli-blockade quantum dots with…

Quantum Physics · Physics 2009-11-10 Sean D. Barrett , Pieter Kok

Solid-state quantum computer architectures with qubits encoded using single atoms are now feasible given recent advances in atomic doping of semiconductors. Here we present a charge qubit consisting of two dopant atoms in a semiconductor…

Silicon is vital to the computing industry due to the high quality of its native oxide and well-established doping technologies. Isotopic purification has enabled quantum coherence times on the order of seconds, thereby placing silicon at…

Mesoscale and Nanoscale Physics · Physics 2017-03-10 X. Mi , J. V. Cady , D. M. Zajac , P. W. Deelman , J. R. Petta

We present a highly efficient molecular dynamics scheme for calculating the concentration profile of dopants implanted in group-IV alloy, and III-V zinc blende structure materials. Our program incorporates methods for reducing computational…

Materials Science · Physics 2009-10-31 Keith M. Beardmore , Niels Gronbech-Jensen

Hyperdoping, overcoming the solubility limit of dopants in a crystalline semiconductor, is a fertile method for the enhancement of the electrical, structural and optical devices' performances and for the exploration of exotic phases such as…

We study within a first-principle approach the band structure, vibrational modes and electron-phonon coupling in boron, aluminum and phosphorus doped silicon in the diamond phase. Our results provide evidences that the recently discovered…

Superconductivity · Physics 2007-05-23 E. Bourgeois , X. Blase

Doping of Si using the scanning probe hydrogen depassivation lithography technique has been shown to enable placing and positioning small numbers of P atoms with nanometer accuracy. Several groups have now used this capability to build…

Silicon spin qubits are a promising quantum computing platform offering long coherence times, small device sizes, and compatibility with industry-backed device fabrication techniques. In recent years, high fidelity single-qubit and…

Mesoscale and Nanoscale Physics · Physics 2019-07-03 A. J. Sigillito , J. C. Loy , D. M. Zajac , M. J. Gullans , L. F. Edge , J. R. Petta

Individual impurity atoms in silicon can make superb individual qubits, but it remains an immense challenge to build a multi-qubit processor: There is a basic conflict between nanometre separation desired for qubit-qubit interactions, and…

Quantum Physics · Physics 2016-04-05 Joe O'Gorman , Naomi H. Nickerson , Philipp Ross , John J. L. Morton , Simon C. Benjamin

The combination of established nanofabrication with attractive material properties makes silicon a promising material for quantum technologies, where implanted dopants serve as qubits with high density and excellent coherence even at…

Applied Physics · Physics 2021-01-22 Lorenz Weiss , Andreas Gritsch , Benjamin Merkel , Andreas Reiserer

Donor spin qubits in silicon offer one- and two-qubit gates with fidelities beyond 99%, coherence times exceeding 30 seconds, and compatibility with industrial manufacturing methods. This motivates the development of large-scale quantum…

Silicon-based quantum bits with electron spins in quantum dots or nuclear spins on dopants are serious contenders in the race for quantum computation. Added to process integration maturity, the lack of nuclear spins in the most abundant…

Doped Si is a promising candidate for quantum computing due to its scalability properties, long spin coherence times, and the astonishing progress on Si technology and miniaturization in the last few decades. This proposal for a quantum…

Mesoscale and Nanoscale Physics · Physics 2009-07-21 M. J. Calderon , A. Saraiva , B. Koiller , S. Das Sarma

We show that the optical and electronic properties of nanocrystalline silicon can be efficiently tuned using impurity doping. In particular, we give evidence, by means of ab-initio calculations, that by properly controlling the doping with…

Other Condensed Matter · Physics 2009-11-13 Federico Iori , Elena Degoli , Rita Magri , Ivan Marri , G. Cantele , D. Ninno , F. Trani , O. Pulci , Stefano Ossicini

Imaging individual conformational instances of generic, inhomogeneous, transient or intrinsically disordered protein systems at the single molecule level in situ is one of the notable challenges in structural biology. Present techniques…

Quantum Physics · Physics 2021-12-08 Viktor S. Perunicic , Muhammad Usman , Charles D. Hill , Lloyd C. L. Hollenberg

Doping of bulk semiconductors has revealed widespread success in optoelectronic applications. In the past few decades, substantial effort has been engaged for doping at the nanoscale. Recently, doped zero-dimensional quantum dots made of…

Mesoscale and Nanoscale Physics · Physics 2016-06-22 Manoj Sharma , Kivanc Gungor , Aydan Yeltik , Murat Olutas , Burak Guzelturk , Yusuf Kelestemur , Talha Erdem , Hilmi Volkan Demir

The formation of quantum computer test structures in silicon by ion implantation enables the characterization of spin readout mechanisms with ensembles of dopant atoms and the development of single atom devices. We briefly review recent…

Mesoscale and Nanoscale Physics · Physics 2015-05-13 T. Schenkel , C. C. Lo , C. D. Weis , A. Schuh , A. Persaud , J. Bokor

Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots.…

Crystalline Si substrates are doped by laser annealing of solution processed Si. For this experiment, dispersions of highly B-doped Si nanoparticles (NPs) are deposited onto intrinsic Si and laser processed using an 807.5nm cw-laser. During…