Related papers: Enhanced Performance of FeFET Gate Stack via Heter…
In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization and switching speed are not on par with those of…
TiO2 ferroelectric field effect transistors (FeFETs) with HfZrO2 (HZO) ferroelectric dielectric layers and bottom gate topology are fabricated for applications in neuromorphic systems. Two sets of devices are fabricated with different gate…
Fluorite structure ferroelectrics, especially hafnium oxide, are widely investigated for their application in non-volatile memories, sensors, actuators, RF devices and energy harvesters. Due to the metastable nature of the ferroelectric…
HfO$_2$- and ZrO$_2$-based ferroelectric thin films have emerged as promising candidates for the gate oxides of next generation electronic devices. Recent work has experimentally demonstrated that a tetragonal/orthorhombic (t/o-) phase…
We study the impact of different interlayers and ferroelectric materials on charge trapping during the endurance fatigue of Si FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) gate stack. We have fabricated FeFET devices with different…
In a ferroelectric field effect transistor (FeFET), it is generally assumed that the ferroelectric gate plays a purely electrostatic role. Recently it has been shown that in some cases, which could be called 'active FeFETs', electronic…
Films of all-important compound hafnia (HfO2) can be prepared in an orthorhombic ferroelectric (FE) state that is ideal for applications, e.g. in memories or negative-capacitance field-effect transistors. The origin of this FE state remains…
Oxygen vacancies are often essential for stabilizing the orthorhombic ferroelectric phase in HfO$_2$, with cationic doping widely employed to introduce such defects. In contrast, systematic studies on anionic doping to induce…
Ferroelectric $\mathrm{HfO}_2$ has attracted extensive research interest for its applications in AI era. The domain walls play a crucial role in phase structure stabilization and polarization switching of ferroelectric $\mathrm{HfO}_2$,…
Doped HfO2 thin films exhibit robust ferroelectric properties even for nanometric thicknesses, are compatible with current Si technology and thus have great potential for the revival of integrated ferroelectrics. Phase control and…
We present a study based on numerical simulations and comparative analysis of recent experimental data concerning the operation and design of FeFETs. Our results show that a proper consideration of charge trapping in the…
To minimize their electrostatic energy, insulating ferroelectric films tend to break up into nanoscale ``Kittel'' domains of opposite polarization that are separated by uncharged 180$^\circ$ domain walls. Here, I report on self-consistent…
Phase stabilization continues to be a critical issue in hafnium oxide (HfO$_2$) due to the interdependence of various contributing factors. Using first-principles calculations, we analyze the effects of strain and doping on stabilizing the…
The ferroelectric properties of nanoscale silicon doped HfO$_2$ promise a multitude of applications ranging from ferroelectric memory to energy-related applications. The reason for the unexpected behavior has not been clearly proven and…
The effect of Mg codoping and its deposition mode on the Fe distribution in (Ga,Fe)N layers grown by metalorganic vapor phase epitaxy is investigated. Both homogeneously- and digitally-Mg codoped samples are considered and contrasted to the…
This study demonstrates the direct correlation between the presence of the L2$_1$ ordered phase and the large enhancement in the thermoelectric performance of Fe$_2$VAl thin films deposited on MgO and Al$_2$O$_3$ substrates at temperatures…
We investigate the effect of top Al2O3 interlayer thickness on the memory window (MW) of Si channel ferroelectric field-effect transistors (Si-FeFETs) with TiN/Al$_2$O$_3$/Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_x$/Si (MIFIS) gate structure. We find…
The continued evolution of CMOS technology demands materials and architectures that emphasize low power consumption, particularly for computations involving large scale data processing and multivariable optimization. Ferroelectric materials…
Online training of deep neural networks (DNN) can be significantly accelerated by performing in-situ vector matrix multiplication in a crossbar array of analog memories. However, training accuracies often suffer due to device non-idealities…
Excellent gate electrostatics in field effect transistors (FETs) based on two-dimensional transition metal dichalcogenide (2D TMD) channels can dramatically decrease static power dissipation. Energy efficient FETs operate in enhancement…