Related papers: Intrinsic Strain-Driven Topological Evolution in S…
Altermagnetism combines fully compensated magnetic order with a magnetic symmetry that relates inequivalent spin sublattices, offering a promising, still underexplored platform for unconventional topological phases. Here we show that both…
Freestanding ferroelectric membranes have emerged as a versatile tool for strain engineering, enabling the exploration of ferroelectric properties beyond traditional epitaxy. The resulting ferroelectric domain patterns stem from the balance…
We present theoretical observations on the topological nature of strained III-V semiconductors. By $k \cdot p$ perturbation, it can be shown that the strain-engineered conduction band hosts a Kramers-Weyl node at the $\Gamma$ point. It is…
We study the influence of epitaxial strain on the electronic properties of InAs/GaSb composite quantum wells (CQWs), host structures for quantum spin Hall insulators, by transport measurements and eight-band $\mathbf{k\cdot p}$…
Recent research showed that the rotational degree of freedom in stacking 2D materials yields great changes in the electronic properties. Here we focus on an often overlooked question: are twisted geometries stable and what defines their…
We have synthesized epitaxial Sr2IrO4 thin-films on various substrates and studied their electronic structures as a function of lattice-strains. Under tensile (compressive) strains, increased (decreased) Ir-O-Ir bond-angles are expected to…
Topological materials, such as topological insulators or semimetals, usually not only reveal the nontrivial properties of their electronic wavefunctions through the appearance of stable boundary modes, but also through very specific…
The interplay of twist and strain in bilayer graphene enables the formation of moir\'e patterns and narrow bands that host correlated and topological phases. While magic-angle twisted bilayer graphene has been widely studied, strain…
We study the modification of the electronic structure in the strong spin-orbit coupled Sr$_2$IrO$_4$ by epitaxial strain using density functional methods. Structural optimization shows that strain changes the internal structural parameters…
The ability to control materials properties through interface engineering is demonstrated by the appearance of conductivity at the interface of certain insulators, most famously the {001} interface of the band insulators LaAlO$_{3}$ and…
Anomalous Hall effect (AHE) can be induced by intrinsic mechanism due to the band Berry phase and extrinsic one arising from the impurity scattering. The recently discovered magnetic Weyl semimetal Co3Sn2S2 exhibits a large intrinsic…
Recent progress in understanding the electronic band topology and emergent topological properties encourage us to reconsider the band structure of well-known materials including elemental substances. Controlling such a band topology by…
Strain solitons are quasi-dislocations that form in van der Waals materials to relieve the energy associated with lattice or rotational mismatch in the crystal. Novel and unusual electronic properties of strain solitons have been both…
In twisted van der Waals materials, local atomic relaxation can alter the underlying electronic structure. Characterizing lattice reconstruction and its susceptibility to strain is essential for understanding emergent electronic states,…
The manipulation of the valley degree of freedom can boost the technological development of novel functional devices based on valleytronics. The current mainstream platform for valleytronics is to produce a monolayer with inversion…
We investigate in the framework of Landau theory the distortion of the strain fields at the interface of two dissimilar ferroelastic oxides that undergo a structural cubic-to-tetragonal phase transition. Simple analytical solutions are…
Strain can be used as an effective tool to tune the crystal structure of materials and hence to modify their electronic structures, including topological properties. Here, taking Na3Bi as a paradigmatic example, we demonstrated with…
Much attention has been given recently to flexible and wearable integrated-electronic devices, with a strong emphasis on real-time sensing, computing and communication technologies. Thin ferroelectric films exhibit switchable polarization…
Recent experiments have shown that transition metal oxide heterostructures such as SrTiO$_3$-based interfaces, exhibit large, gate tunable, spintronic responses. Our theoretical study showcases key factors controlling the magnitude of the…
Here, we explore the role of inherent altermagnetic topology in transverse transport phenomena (such as crystal/anomalous Hall, Nernst, and thermal Hall effects) in several famous altermagnets, including tetragonal…