Recent progress in understanding the electronic band topology and emergent topological properties encourage us to reconsider the band structure of well-known materials including elemental substances. Controlling such a band topology by external field is of particular interest from both fundamental and technological view point. Here we report the pressure-induced topological phase transition from a semiconductor to a Weyl semimetal in elemental tellurium probed by transport measurements. Pressure variation of the periods of Shubnikov-de Haas oscillations, as well as oscillations phases, shows an anomaly around the pressure theoretically predicted for topological phase transition. This behavior can be well understood by the pressure-induced band deformation and resultant band crossing effect. Moreover, effective cyclotron mass is reduced toward the critical pressure, potentially reflecting the emergence of massless linear dispersion. The present result paves the way for studying the electronic band topology in well-known compounds and topological phase transition by the external field.
@article{arxiv.1909.02266,
title = {Pressure-induced topological phase transition in noncentrosymmetric elemental Tellurium},
author = {Toshiya Ideue and Motoaki Hirayama and Hiroaki Taiko and Takanari Takahashi and Masayuki Murase and Takashi Miyake and Shuichi Murakami and Takao Sasagawa and Yoshihiro Iwasa},
journal= {arXiv preprint arXiv:1909.02266},
year = {2020}
}