Related papers: Breaking the material-limited temperature coeffici…
In this paper, we develop an approximate theory of the temperature coefficient of resistivity (TCR) and conductivity based upon the recently proposed Microscopic Response Method. By introducing suitable approximations for the lattice…
By invoking the microscopic response method in conjunction with a reasonable set of approximations, we obtain new explicit expressions for the electrical conductivity and temperature coefficient of resistivity (TCR) in amorphous…
The thermal coefficient of resistance (TCR) for epitaxial silicon-germanium (SiGe) layers has been analyzed by experiment and simulation. Predictive simulation using drift-diffusion formalism and self-consistent quantum-mechanical solutions…
Temperature coefficient of resistance (TCR) of a bolometer can be tuned by modifying the thermal conductance of an absorbing materials since they sense radiations via the temperature change in the absorber. However, the thermal conductance…
Thermal contact has always been a hot issue in many engineering fields and thermal contact resistance (TCR) is one of the important indicators weighing the heat transfer efficiency among the interfaces. In this paper, the contact heat…
Temperature dependence of electrical resistance of single-walled carbon nanotube (SWCNTs)/epoxy nanocomposites, which is characterized by a temperature coefficient of resistance (TCR), is experimentally investigated. In the existing…
The test masses in next-generation gravitational-wave interferometers may have a semiconductor substrate, most likely silicon. The stochastic motion of charge carriers within the semiconductor will cause random fluctuations in the…
The remarkable finding of this work is the linear correlation between the critical temperature of superconducting (SC) transition, Tc, and the room-temperature half-width of angular correlation of positron annihila- tion phonons (ACPAP),…
To achieve high performance thermoelectric materials and devices, thermoelectric transistors, which integrate thermoelectric effects with transistor technology, represent a promising approach. Here p type Bi0.5Sb1.5Te3 and n type…
Several issues concerning the applicability of the temperature coefficient of the resistivity (TCR) method to scaled interconnect lines are discussed. The central approximation of the TCR method, the substitution of the interconnect wire…
Silicon Carbide (SiC) is a typical material for third-generation semiconductor. The thermal boundary resistance (TBR) of 4H-SiC/SiO2 interface, was investigated by both experimental measurements and theoretical calculations. The structure…
Thermal management has become a promising field in recent years due to the limitation of energy resources and the global warming. An important topic in improving the efficiency of thermal energy utilization is how to control the flows of…
Few concentrated disordered binary metallic alloys show a negative temperature coefficient of resistivity (TCR), which is quite unusual. V$_{0.3}$Ti$_{0.7}$ is one such alloy that shows resistivity exceeding 100 $\mu\Omega$ cm and exhibits…
Identifying materials and devices which offer efficient thermoelectric effects at low temperature is a major obstacle for the development of thermal management strategies for low-temperature electronic systems. Superconductors cannot offer…
As the variation of temperature alters the intrinsic carrier density in a semiconductor, numerical simulations indicate that the consequent variation of the relative permittivity in the terahertz regime provides a way to realize thermally…
We demonstrate strong negative electrothermal feedback accelerating and linearizing the response of a thermal kinetic inductance detector (TKID). TKIDs are a proposed highly multiplexable replacement to transition-edge sensors and measure…
The temperature coefficients of the resistivity (TCR) of Cu, Ru, Co, Ir, and W thin films have been investigated as a function of film thickness below 10 nm. Ru, Co, and Ir show bulk-like TCR values that are rather independent of the…
A generalized model for the critical temperature Tc of superconducting bilayers is presented, which is valid with no restrictions to film thicknesses, Tc of the layers and interface resistivity. The model is verified experimentally on a…
The development of large-scale quantum systems increasingly relies on the close integration of heterogeneous components such as qubits, control electronics, and readout circuits, making thermal management at cryogenic temperatures a central…
Time-domain thermoreflectance (TDTR) is a widely used technique for characterizing the thermal properties of bulk and thin-film materials. Traditional TDTR analyses typically focus on positive delay time data for fitting, often requiring…