Related papers: $\mu_\mathrm{2T}(n)$: A Method for Extracting the …
The temperature dependence of experimental charge carrier mobility is commonly used as a predictor of the dominant carrier scattering mechanism in semiconductors, particularly in thermoelectric applications. In this work, we critically…
Charge transport in MoS2 in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS2 emerge in the high density regime where conduction occurs via extended states. Here,…
Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mobility is desirable for a reduced loss and high-speed…
We have measured the Hall effect on recently synthesized single crystals of quasi-one-dimensional organic conductor TTF-TCNQ, a well known charge transfer complex that has two kinds of conductive stacks: the donor (TTF) and the acceptor…
We report on recent experimental results from transport measurements with large Hall bars made of high mobility GaAs/AlGaAs heterostructures. Thermally activated conductivities and hopping transport were investigated in the integer quantum…
We fabricate electric double-layer field-effect transistor (EDL-FET) devices on mechanically exfoliated few-layer graphene. We exploit the large capacitance of a polymeric electrolyte to study the transport properties of three, four and…
We compute Hall transport coefficients associated with Taub-NUT AdS black holes in four space-time dimensions using the probe D-brane approach. In particular, we examine the effects due to the NUT parameter ($n$), or equivalently, the novel…
We have measured magnetotransport of the two-dimensional electron gas in a Hall bar geometry in the presence of small carrier density gradients. We find that the longitudinal resistances measured at both sides of the Hall bar interchange by…
Using the bottom-up approach in a holographic setting, we attempt to study both the transport and thermodynamic properties of a generic system in 3+1 dimensional bulk spacetime. We show the exact 1/T and $T^2$ dependence of the longitudinal…
Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process.…
We present a comparative study of the (magneto)transport properties, including Hall effect, of bulk, thin film and nanostructured MnSi. In order to set our results in relation to published data we extensively characterize our materials,…
The accuracy of contact resistance values of two-dimensional field-effect transistors extracted with the \textit{Y}-function considering the impact of the intrinsic mobility degradation is evaluated here. The difference between…
Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing…
In this work, we present the investigation of temperature dependent hall measurement of the ultra thin VO$_2$ films grown on Si/SiO$_2$ substrate. Experimental results suggest that electrons are the predominant carrier both in the…
We report the influence of the field effect on the dc resistance and Hall coefficient in the strain-induced Mott insulating state of an organic superconductor $\kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Br. Conductivity obeys the formula for…
We report on the fabrication of field-effect transistors based on single and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We find that the doping level strongly depends on the device…
The layer interdependence of transport in an undoped electron-hole bilayer (uEHBL) device was studied as a function of carrier density, interlayer electric field, and temperature. The uEHBL device consisted of a density tunable,…
As a prototypical altermagnet, RuO$_{2}$ has been subject to many controversial reports regarding its magnetic ground state and the existence of crystal Hall effects. We obtained high-quality RuO$_{2}$ single crystal with a residual…
We construct a theory of charge transport by the surface states of topological insulators in three dimensions. The focus is on the experimentally relevant case when the electron doping is such that the Fermi energy $\epsilon_F$ and…
The magneto-transport properties of nanocomposite C:Co (15 and 40 at.% Co) thin films are investigated. The films were grown by ion beam co-sputtering on thermally oxidized silicon substrates in the temperature range from 200 to 500 degC.…