We present a comparative study of the (magneto)transport properties, including Hall effect, of bulk, thin film and nanostructured MnSi. In order to set our results in relation to published data we extensively characterize our materials, this way establishing a comparatively good sample quality. Our analysis reveals that in particular for thin film and nanostructured material, there are extrinsic and intrinsic contributions to the electronic transport properties, which by modeling the data we separate out. Finally, we discuss our Hall effect data of nanostructured MnSi under consideration of the extrinsic contributions and with respect to the question of the detection of a topological Hall effect in a skyrmionic phase.
@article{arxiv.1706.04046,
title = {MnSi-nanostructures obtained from thin films: magnetotransport and Hall effect},
author = {D. Schroeter and N. Steinki and M. Schilling and A. Fernández Scarioni and P. Krzysteczko and T. Dziomba and H. W. Schumacher and D. Menzel and S. Süllow},
journal= {arXiv preprint arXiv:1706.04046},
year = {2018}
}