Related papers: $\mu_\mathrm{2T}(n)$: A Method for Extracting the …
We develop a two-carrier Hall effect model fitting algorithm to analyze temperature-dependent magnetotransport measurements of a high-density ($\sim4\times10^{13}$ cm$^2$/Vs) polarization-induced two-dimensional hole gas (2DHG) in a GaN/AlN…
Electrostatic effects can strongly constrain charge transport in thinned high-purity germanium (HPGe), with direct implications for radiation detectors and Ge-based electronic and quantum devices. We report a systematic experimental…
We report on electronic transport measurements of electrostatically gated nano-devices of the semimetal WTe\textsubscript{2}. High mobility metallic behavior is achieved in the 2D limit by encapsulating thin flakes in an inert atmosphere.…
Carbon nanotube field-effect transistors operate over a wide range of electron or hole density, controlled by the gate voltage. Here we calculate the mobility in semiconducting nanotubes as a function of carrier density and electric field,…
Temperature dependent magneto-transport measurements in magnetic fields of up to 12 Tesla were performed on thin film vanadium dioxide (VO2) across the metal-insulator transition (MIT). The Hall carrier density increases by 4 orders of…
For applications to sensor design, the product nxmu of the electron density n and the mobility mu is a key parameter to be optimized for enhanced device sensitivity. We model the carrier mobility in a two dimensional electron gas (2DEG)…
In order to provide the best possible performance, modern infrared photodetector designs necessitate extremely precise modeling of the superlattice absorber region. We advance the Rode's method for the Boltzmann transport equation in…
Ability to understand and model the performance limits of nanowire transistors is the key to design of next generation devices. Here, we report studies on high-mobility junction-less gate-all-around nanowire field effect transistor with…
Here, we report a systematic study on the Hall-effect of the semi-metallic state of bulk MoTe$_2$, which was recently claimed to be a candidate for a novel type of Weyl semi-metallic state. The temperature ($T$) dependence of the carrier…
We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors. Pulsed IV measurements established increasing electron velocities with decreasing…
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices…
Atomically thin semiconducting MoS2 is of great interest for high-performance flexible electronic and optoelectronic devices. Initial measurements using back-gated field-effect transistor (FET) structures on SiO2 yielded mobility of 1-50…
By designing a multi-channel millimeter Hall measurement configuration, we realize the carrier-density (locally) controllable measurement on the transport property in 2H MoS$_{2}$. We observe a linearly increased Hall conductivity and…
The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate…
We report on a systematic study of the density dependence of mobility in a low-density Carbon-doped (100) GaAs two-dimensional hole system (2DHS). At T= 50 mK, a mobility of 2.6 x 10^6 cm^2/Vs at a density p=6.2 x 10^10 cm^- was measured.…
A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and…
When a high electron mobility transistor is illuminated, the absorbed photons excite electron-hole pairs. The generated pairs are separated by the built in field in such a way that the electrons end up in the quantum well generating a…
Transparent and conductive ZnO:Ga thin films are prepared by laser molecular-beam epitaxy. Their electron properties were investigated by the temperature-dependent Hall-effect technique. The 300-K carrier concentration and mobility were…
We have characterized phase coherence length, spin orbit scattering length, and the Hall factor in n-type MoS2 2D crystals via weak localization measurements and Hall-effect measurements. Weak localization measurements reveal a phase…
Molybdenum disulfide (MoS2) nanosheet, one of two dimensional (2D) semiconductors, has recently been regarded as a promising material to break through the limit of present semiconductors including graphene. However, its potential in carrier…