Related papers: A device-level compact model for mushroom-type pha…
This paper presents a physics-based modeling framework for the analysis and transient simulation of circuits containing Spin-Transfer Torque (STT) Magnetic Tunnel Junction (MTJ) devices. The framework provides the tools to analyze the…
Spontaneous structural relaxation is intrinsic to glassy materials due to their metastable nature. For phase-change materials (PCMs), the resultant temporal change in electrical resistance seriously hamper in-memory computing (IMC)…
In this paper, phase combinations among martensitic variants in shape memory alloys patches and bars are simulated by a hybrid optimization methodology. The mathematical model is based on the Landau theory of phase transformations. Each…
The comprehensive computer simulation study of the phase diagram of the repulsive step potential system in three dimensions is represented. We show that the system with a simple purely repulsive isotropic potential demonstrates a number of…
As CMOS scaling reaches its technological limits, a radical departure from traditional von Neumann systems, which involve separate processing and memory units, is needed in order to significantly extend the performance of today's computers.…
Magneto-Electric FET (MEFET) is a recently developed post-CMOS FET, which offers intriguing characteristics for high speed and low-power design in both logic and memory applications. In this paper, for the first time, we propose a…
Energy-efficient programmable photonic integrated circuits (PICs) are the cornerstone of on-chip classical and quantum optical technologies. Optical phase shifters constitute the fundamental building blocks which enable these programmable…
Programmable metasurfaces promise a great potential to construct low-cost phased array systems due to the capability of elaborate modulation over electromagnetic (EM) waves. However, they are in either reflective or transmissive mode, and…
Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of…
The success of semiconductor electronics is built on the creation of compact, low-power switching elements that offer routing, logic, and memory functions. The availability of nanoscale optical switches could have a similarly transformative…
In this paper, we present a new compact model of threshold switching devices which is suitable for efficient circuit-level simulations. First, a macro model, based on a compact transistor based circuit, was implemented in LTSPICE. Then, a…
This work proposes a switched model reference adaptive control (S-MRAC) architecture for a multi-input multi-output (MIMO) switched linear system with memory for enhanced learning. A salient feature of the proposed method that separates it…
The prevalent high intrinsic absorption in the crystalline state of phase-change materials (PCMs), typically leads to a decline in modulation efficiency for phase-change metasurfaces, underutilizing their potential for quasi-continuous…
Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…
In the last decade phase change materials (PCM) research has switched from practical application in optical data storage toward electrical phase change random access memory technologies (PCRAM). As these devices are commercialised, we…
The phase-field model for fracture, despite its popularity and ease of implementation comes with its set of computational challenges. They are the non-convex energy functional, variational inequality due to fracture irreversibility, the…
The morphological evolution of the conducting filament (CF) predominantly controls the electric response of the resistive random access memory (ReRAM) devices. However, the parameters -- in terms of the material and the processing -- which…
Owing to the increasing interest in the commercialization of phase-change memory (PCM) devices, a number of TCAD models have been developed for their simulation. These models formulate the melting, amorphization and crystallization of…
We present a framework dedicated to modelling the resistive switching operation of Valence Change Memory (VCM) cells. The method combines an atomistic description of the device structure, a Kinetic Monte Carlo (KMC) model for the creation…
The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical resistance by electrostatic charging. Flash memories could soon…