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In this article, we develop analytical-numerical models for reconfigurable reflecting metasurfaces formed by chessboard-patterned arrays of metallic patches. These patch arrays are loaded with varactor diodes in order to enable surface…
A reconfigurable microwave reflectarray metasurface (MS) is investigated for beamforming applications. The reflected beam direction is changed by applying external dc voltages, which create a reflection phase gradient on the structure. The…
In Valence Change Memory (VCM) cells, the conductance of an insulating switching layer is reversibly modulated by creating and redistributing point defects under an external field. Accurate simulations of the switching dynamics of these…
In-memory computing (IMC) is an emerging non-von Neumann paradigm that leverages the intrinsic physics of memory devices to perform computations directly within the memory array. Among the various candidates, phase-change memory (PCM) has…
Fully supervised change detection methods have achieved significant advancements in performance, yet they depend severely on acquiring costly pixel-level labels. Considering that the patch-level annotations also contain abundant information…
The progress in neuromorphic computing is fueled by the development of novel nonvolatile memories capable of storing analog information and implementing neural computation efficiently. However, like most other analog circuits, these devices…
Spin-crossover has a wide range of applications from memory devices to sensors. This has to do mainly with the nature of the transition, which may be abrupt, gradual or incomplete and may also present hysteresis. This transition alters the…
Phase Coded (PC) waveforms possess desirable Auto-Correlation Function (ACF) properties for use in radar and sonar systems. However, their spectra possess high spectral leakage due to the abrupt phase transitions between the chips in the…
Scalable solid-state quantum computers will require integration with analog and digital electronics. Efficiently simulating the quantum-classical electronic interface is hence of paramount importance. Here, we present Verilog-A compact…
The Ovonic Phase Change Memory is critical in the quest to meet the increasing commercial needs for new information systems. The important paper of DerChang Kau et al. [1], describing a stackable cross point phase change memory, resulting…
Neuromorphic devices, with their distinct advantages in energy efficiency and parallel processing, are pivotal in advancing artificial intelligence applications. Among these devices, memristive transistors have attracted significant…
Traditional DRAM-based main memory systems face several challenges with memory refresh overhead, high latency, and low throughput as the industry moves towards smaller DRAM cells. These issues have been exacerbated by the emergence of…
The growing energy demands of information and communication technologies, driven by data-intensive computing and the von Neumann bottleneck, underscore the need for energy-efficient alternatives. Resistive random-access memory (RRAM)…
Phase-field models of fracture introduce smeared cracks of width commensurate with a regularisation length parameter $\epsilon$ and obeying a minimum energy principle. Mesh adaptivity naturally suggests itself as a means of supplying…
We present a fast generative modeling approach for resistive memories that reproduces the complex statistical properties of real-world devices. To enable efficient modeling of analog circuits, the model is implemented in Verilog-A. By…
Quantum phase transitions in many-body systems are fundamentally characterized by complex correlation structures, which pose computational challenges for conventional methods in large systems. To address this, we propose a hybrid…
We present a computationally inexpensive yet accurate phenomenological model of memristive behavior in titanium dioxide devices by fitting experimental data. By design, the model predicts most accurately I-V relation at small non-disturbing…
We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100…
We show that memory can be encoded in a model amorphous solid subjected to athermal oscillatory shear deformations, and in an analogous spin model with disordered interactions, sharing the feature of a deformable energy landscape. When…
As dynamic random access memory (DRAM) and other current transistor-based memories approach their scalability limits, the search for alternative storage methods becomes increasingly urgent. Phase-change memory (PCM) emerges as a promising…