Related papers: Quantum Mechanical Approach for Modeling of Ternar…
In this work, we construct a Wannier tight-binding model for TaS$_2$ under a superlattice potential modulation, based on the Joint Automated Repository for Various Integrated Simulations database established by the U.S. National Institute…
Due to the large-period superlattices emerging in moire two-dimensional (2D) materials, electronic states in such systems exhibit low energy flat bands that can be used to simulate strongly correlated physics in a highly tunable setup.…
We present a detailed x-ray diffraction study of the strain in InAs/GaSb superlattices grown by molecular beam epitaxy. The superlattices were grown with either InSb or GaAs interfaces. We show that the superlattice morphology, either…
We propose a simple and effective approach to construct the empirical tight-binding parameters of ternary alloys in the virtual crystal approximation. This combines a new, compact formulation of the strain parameters and a linear…
Superlattices (SLs) consisted of alternating Bi2Se3 and In2Se3 layers are grown on Si(111) by molecular-beam epitaxy. Bi2Se3, a three-dimensional topological insulator (TI), showed good chemical and structural compatibility with In2Se3, a…
We present a multiscale approach for modeling an intermediate-band solar cell based on a GaAs-GaAlAs quantum dot superlattice of cubic symmetry. Our framework combines high-accuracy theoretical calculations of the superlattice band…
By combining band gap engineering with the self-organized growth of quantum dots, we present a scheme of adjusting the mid-infrared absorption properties to desired energy transitions in quantum dot based photodetectors. Embedding the self…
The ability to manipulate two-dimensional (2D) electrons with external electric fields provides a route to synthetic band engineering. By imposing artificially designed and spatially periodic superlattice (SL) potentials, 2D electronic…
We compare InAs-based and GaSb-based interband cascade lasers (ICLs) with the same 12 stages active region designed to emit at a wavelength of 4.6 {\mu}m. They employ a hybrid cladding architecture with the same geometry and inner claddings…
The electronic structure of surfaces plays a key role in the properties of quantum devices. However, surfaces are also the most challenging to simulate and engineer. Here, we study the electronic structure of InAs(001), InAs(111), and…
The structural and electronic properties in common anion (GaSb)_1/(InSb)_1 and common cation (InAs)_1/(InSb)_1 [111] ordered superlattices have been determined using the local density total energy full potential linearized augmented plane…
We present the characterization of the band structure of GaAs/AlAs quantum-wire 1D superlattices performed by magnetophonon resonance with pulsed magnetic fields up to 35 T. The samples, generated by the "atomic saw method" from original…
BAs is III-V semiconductor with ultra-high thermal conductivity, but many of its electronic properties are unknown. This work applies predictive atomistic calculations to investigate the properties of BAs heterostructures, such as strain…
Correlated flat bands and altermagnetism are two important directions in quantum materials, centred respectively on interaction-dominated phases and symmetry-enforced spin-textured states, yet both derive from lattice symmetry and orbital…
Quantum materials constitute a novel category of substances wherein quantum effects and electron-electron (e-e) interactions give rise to unforeseen phenomena on a macroscopic scale. Of particular interest within the realm of quantum…
Moir\'e superlattices have emerged as a versatile platform for exploring a wide range of ex- otic quantum phenomena. Unlike angstrom-scale materials, the moir\'e length-scale system contains a large number of atoms, and its electronic…
Two-dimensional (2D) atom lattices provide model setups for Coulomb correlations inducing competing ground states, partly with topological character. Hexagonal SiC(0001) is an intriguing wide-gap substrate, spectroscopically separated from…
Realizing new classes of ground states in strongly correlated electron systems continues to be at the forefront of condensed matter physics. Heavy-fermion materials, whose electronic structure is essentially three-dimensional, are one of…
We report comprehensive study of physical properties of the binary superconductor compound SnAs. The electronic band structure of SnAs was investigated using both angle-resolved photoemission spectroscopy (ARPES) in a wide binding energy…
We explore an alternative way to fabricate (In,Ga)N/GaN short-period superlattices on GaN(0001) by plasma-assisted molecular beam epitaxy. We exploit the existence of an In adsorbate structure manifesting itself by a…