Related papers: Quantum Coulomb Blockade in Orbital Resolved Phosp…
Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide, we derive simple conditions for the conductance of the dot to become a step-like function of the number of doping atoms inside the dot, with…
We study the addition energy spectra of phosphorene quantum dots focusing on the role of dot size, edges passivation, number of layers and dielectric constant of the substrate where the dots are deposited. We show that for sufficiently low…
During the last decades, quantum dots within the Coulomb blockade regime of transport have been proposed as essential building blocks for a wide variety of nanomachines. This includes thermoelectric devices, quantum shuttles, quantum pumps,…
Gate-tunable quantum-mechanical tunnelling of particles between a quantum confined state and a nearby Fermi reservoir of delocalized states has underpinned many advances in spintronics and solid-state quantum optics. The prototypical…
We study the interplay between Coulomb blockade and the Kondo effect in quantum dots. We use a self-consistent scheme which describes mesoscopic devices in terms of a collective phase variable (slave rotor) and quasiparticle degrees of…
Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances…
It is discovered that the zero-dimensional character of the silicon atom dangling bond (DB) state allows controlled formation and occupation of a new form of quantum dot assemblies. Whereas on highly doped n-type substrates isolated DBs are…
Gate control of phosphorus donor based charge qubits in Si is investigated using a tight-binding approach. Excited molecular states of P2+ are found to impose limits on the allowed donor separations and operating gate voltages. The effects…
The charging of a quantum box connected to a lead by a single-mode point contact is solved for arbitrary temperatures, tunneling amplitudes, and gate voltages, using a variant of Wilson's numerical renormalization group. The charge inside…
Electronic transport through a two-path triple-quantum-dot system with two source leads and one drain is studied. By separating the conductance of the two double dot paths, we are able to observe double dot and triple dot physics in…
Coulomb interactions that occur in electronic structure calculations are correlated by allowing basis function components of the interacting densities to polarize, thereby reducing the magnitude of the interaction. Exchange integrals of…
We report transport measurements on a semiconductor quantum dot with a small number of confined electrons. In the Coulomb blockade regime, conduction is dominated by cotunneling processes. These can be either elastic or inelastic, depending…
We study transport through a quantum dot in the fractional quantum Hall regime with filling factors \nu=2/3 and \nu=5/2, weakly coupled to the leads. We account for both injection of electrons to/from the leads, and quasiparticle…
We study theoretically the quantum dynamics of an electron in the singlyionized double-donor structure in the semiconductor host under the influence of laser pulses whose frequencies are close to structure resonant frequencies. This system…
Correlation among particles in finite quantum systems leads to complex behaviour and novel states of matter. One remarkable example is predicted to occur in a semiconductor quantum dot (QD) where at vanishing density the Coulomb correlation…
Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility…
We study theoretically the quantum dynamics of an electron in the singly-ionized double-donor structure in the semiconductor host under the influence of two strongly detuned laser pulses. This structure can be used as a charge qubit where…
The quantum transport of electrons in an artificial atom, such as a quantum dot (QD), is governed by the Coulomb blockade (CB) effects, revealing the ground-state charge configuration of the electronic system under interplays of the on-site…
Surface-gated quantum dots (QDs) in semiconductor heterostructures represent a highly attractive platform for quantum computation and simulation. However, in this implementation, the barriers through which the QD is tunnel-coupled to source…
Phosphorus donor spins in silicon offer a number of promising characteristics for the implementation of robust qubits. Amongst various concepts for scale-up, the shared-control concept takes advantage of 3D scanning tunnelling microscope…