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High entropy oxides (HEOs) are a rapidly growing class of compositionally complex ceramics in which configurational disorder is engineered to unlock novel functionality. While average crystallographic symmetry is often retained, local…

The presence of oxygen vacancy, as well as ordering of vacancies plays an important role in determining the electronic, ionic and thermal transport properties of many transition metal oxide materials. Controlling the concentration of oxygen…

Mesoscale and Nanoscale Physics · Physics 2018-12-05 Xue Rui , Robert Klie

High-entropy oxide (HEO) thin films uniquely superimpose exceptional chemical disorder with exceptional crystalline quality and coherence - an intersection we term anomalous crystallinity that arises from coupled structural, chemical, and…

Oxygen vacancies (VOs) effects on magnetic ordering in Eu0.5Ba0.5TiO3-{\delta} (EBTO3-{\delta}) thin films have been investigated using a combination of experimental measurements and first-principles density-functional calculations. Two…

Disorder, primarily in the form of oxygen vacancies, cation stoichiometry and atomic inter-diffusion, appear to play vital roles in the electronic and transport properties of the metallic electron liquid at the oxide hetero-interfaces.…

Strongly Correlated Electrons · Physics 2018-07-05 Urmimala Dey , Swastika Chatterjee , A. Taraphder

We report the enthalpy of oxygen vacancy formation in thin films of electron-doped SrTiO$_{3}$, under different degrees of epitaxial stress. We demonstrate that both compressive and tensile strain decrease this energy at a very similar…

Materials Science · Physics 2017-05-24 L. Iglesias , A. Sarantopoulos , C. Magen , F. Rivadulla

Understanding the role of defects in oxide heterostructures is crucial for future materials control and functionalization. We hence study the impact of oxygen vacancies (OVs) at variable concentrations on orbital- and spin exchange in the…

Materials Science · Physics 2015-10-13 Malte Behrmann , Frank Lechermann

Redox-based memristive devices are among the alternatives for the next generation of non volatile memories, but also candidates to emulate the behavior of synapses in neuromorphic computing devices. It is nowadays well established that the…

Mesoscale and Nanoscale Physics · Physics 2020-01-08 Cristian Ferreyra , Wilson Román Acevedo , Ralph Gay , Diego Rubi , María José Sánchez

High-entropy oxides (HEOs) offer a unique platform for exploring the thermodynamic interaction between configurational entropy and enthalpy in stabilizing complex solid solutions. In this study, a series of rock-salt structured oxides with…

Materials Science · Physics 2025-10-13 Ashutosh Kumar , Adrien Moll , Jitendra Kumar , Diana Dragoe , David Bérardan , Nita Dragoe

We present a density-functional theory study of the effects of oxygen vacancies on the structural and electronic properties of vanadium dioxide (VO$_2$). Our motivation is the reported suppression of the metal-insulator transition by oxygen…

Materials Science · Physics 2025-11-11 Oskar Leibnitz , Peter Mlkvik , Nicola A. Spaldin , Claude Ederer

High entropy oxides (HEOs) are single phase solid solutions consisting of 5 or more cations in approximately equiatomic proportions. In this study, we show reversible control of optical properties in a rare-earth (RE) based…

High entropy oxides (HEOs) are a rapidly emerging class of functional materials consisting of multiple principal cations. The original paradigm of HEOs assumes cationic occupations with the highest possible configurational entropy allowed…

High entropy oxides (HEOs) are a class of materials with vast compositional space and tunable properties, making them attractive for applications in thermoelectrics, magnetism, ionic conduction, and beyond. However, their metastable nature…

We investigate the effect of oxygen vacancies and hydrogen dopants at the surface and inside slabs of LaAlO3, SrTiO3, and LaAlO3/SrTiO3 heterostructures on the electronic properties by means of electronic structure calculations as based on…

Strongly Correlated Electrons · Physics 2019-05-03 I. I. Piyanzina , V. Eyert , Yu. V. Lysogorskiy , D. A. Tayurskii , T. Kopp

Oxygen vacancies (OV) are pervasive in metal oxides and play a pivotal role in the switching behaviour of oxide-based memristive devices. In this work we address, through a combination of experiments and theoretical simulations, OV dynamics…

Mesoscale and Nanoscale Physics · Physics 2024-06-21 C. Ferreyra , R. Leal Martir , D. Rubi , María José Sánchez

Oxygen vacancies (VO), a common type of point defects in metal oxides materials, play important roles on the physical and chemical properties. To obtain stoichiometric oxide crystal, the pre-existing VO is always removed via careful…

Materials Science · Physics 2021-01-19 Bowen Li , Min Hu , Hui Ren , Changlong Hu , Liang Li , Guozhen Zhang , Jun Jiang , Chongwen Zou

Disorder in high entropy alloys, arising from the random distribution of multiple elements, plays a crucial role in their novel properties desirable for various advanced engineering applications. We investigate the role of compositional and…

The influence of surface oxygen vacancies on the oxygen evolution reaction on bismuth vanadate is studied using hybrid density functional theory. Our findings reveal the thermodynamic instability of the neutral unionized defect (${\rm…

Materials Science · Physics 2023-06-19 Nicklas Österbacka , Hassan Ouhbi , Francesco Ambrosio , Julia Wiktor

Controlling functionalities, such as magnetism or ferroelectricity, by means of oxygen vacancies (VO) is a key issue for the future development of transition metal oxides. Progress in this field is currently addressed through VO variations…

Metal-insulator transitions (MIT),an intriguing correlated phenomenon induced by the subtle competition of the electrons' repulsive Coulomb interaction and kinetic energy, is of great potential use for electronic applications due to the…

Materials Science · Physics 2021-10-13 Kun Han , Hanyu Wang , Liang Wu , Yu Cao , Dong-Chen Qi , Changjian Li , Zhen Huang , Xiao Li , X. Renshaw Wang
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