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The nonlinear Hall effect (NLHE) with time-reversal symmetry constitutes the appearance of a transverse voltage quadratic in the applied electric field. It is a second-order electronic transport phenomenon that induces frequency doubling…

The quantum anomalous Hall effect is a fundamental transport response of a topologically non-trivial system in zero magnetic field. Its physical origin relies on the intrinsically inverted electronic band structure and ferromagnetism, and…

We report observation of the fractional quantum Hall effect (FQHE) in high mobility multi-terminal graphene devices, fabricated on a single crystal boron nitride substrate. We observe an unexpected hierarchy in the emergent FQHE states that…

Mesoscale and Nanoscale Physics · Physics 2011-06-17 C. R. Dean , A. F. Young , P. Cadden-Zimansky , L. Wang , H. Ren , K. Watanabe , T. Taniguchi , P. Kim , J. Hone , K. L. Shepard

The interplay between spontaneous symmetry breaking and topology can result in exotic quantum states of matter. A celebrated example is the quantum anomalous Hall (QAH) state, which exhibits an integer quantum Hall effect at zero magnetic…

We report transport studies on (Bi,Sb)2Te3 topological insulator thin films with tunable electronic band structure. We find a doping and temperature regime in which the Hall coefficient is negative indicative of electron-type carriers,…

Two-dimensional van der Waals materials offer a highly tunable platform for generating emergent quantum phenomena through symmetry breaking. Stacking-induced symmetry breaking at interfaces provides an effective method to modulate their…

Mesoscale and Nanoscale Physics · Physics 2025-01-23 Xing-Guo Ye , Zhen-Tao Zhang , Peng-Fei Zhu , Wen-Zheng Xu , An-Qi Wang , Zhi-Min Liao

Exploring the coupling between layer, magnetism, valley, and topology in two-dimensional (2D) materials is an important approach to deepen our understanding of materials properties. We propose 27 stable ferromagnetic semiconductor…

Materials Science · Physics 2025-03-03 Xinyu Tian , Zixuan Zhang , Lixiu Guan , Xiaobiao Liu , Xiaoyu Zhao , Linyang Li

The present paper corresponds to the third work of the author related to the magnetotransport properties concerning on the graphene systems. In the first one the integer quantum Hall effect in the monolayer graphene, (MG), MGIQHE, was…

Mesoscale and Nanoscale Physics · Physics 2016-02-09 M. A. Hidalgo , R. Cangas

Relying on the magnetism induced by the proximity effect in heterostructures of topological insulators and magnetic insulators is one of the promising routes to achieve the quantum anomalous Hall effect. Here we investigate heterostructures…

Materials Science · Physics 2020-09-07 V. M. Pereira , C. N. Wu , C. -A. Knight , A. Choa , L. H. Tjeng , S. G. Altendorf

The recent realizations of the quantum anomalous Hall effect (QAHE) in MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$ benchmark the (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ family as a promising hotbed for further QAHE improvements. The family owes its…

Interfacing topological insulators (TIs) with magnetic insulators (MIs) has been widely used to study the interaction between topological surface states and magnetism. Previous transport studies typically interpret the suppression of weak…

Mesoscale and Nanoscale Physics · Physics 2022-10-19 Yang Wang , Sivakumar V. Mambakkam , Yue-Xin Huang , Yong Wang , Yi Ji , Cong Xiao , Shengyuan A. Yang , Stephanie A. Law , John Q. Xiao

We develop the moir\'e band theory for M-valley twisted square homobilayers with layer groups $P$-$42m$ and $P$-$4m2$, and propose candidate material realizations. We show that moir\'e ferroelectricity-originating from sliding…

Mesoscale and Nanoscale Physics · Physics 2026-03-17 Kejie Bao , Rui Shi , Huan Wang , Linghao Huang , Jing Wang

We study the magnetotransport properties of dual-gated graphene bilayers, in which the total density and layer density imbalance are independently controlled. As the bilayer is imbalanced we observe the emergence of a quantum Hall state…

Mesoscale and Nanoscale Physics · Physics 2009-09-15 Seyoung Kim , E. Tutuc

Materials that intrinsically possess both magnetism and topological states represent a key frontier of quantum materials research. Recently, Mn2(Bi/Sb)2Te5 has emerged as a promising candidate for hosting topological surface states coupled…

Materials Science · Physics 2026-03-25 M. M. Sharma , Ankush Saxena , S. M. Huang , Santosh Karki Chhetri , Jin Hu , V. P. S. Awana

The rare-earth nickelates (RNiO3) exhibit interesting phenomena such as unusual antiferromagnetic order at wavevector q = (1/2, 0, 1/2) and a tunable insulator-metal transition that are subjects of active research. Here we present…

Using the fiber bundle concept developed in geometry and topology, the fractionally quantized Hall conductivity is discussed in the relevant many--particle configuration space. Electron-magnetic field and electron-electron interactions…

Condensed Matter · Physics 2016-08-31 T. Asselmeyer , R. Keiper

The intrinsic magnetic order, large topological-magnetic gap and rich topological phases make MnBi2Te4 a wonderful platform to study exotic topological quantum states such as axion insulator and Chern insulator. To realize and manipulate…

The intrinsic substitutional and antisite defects cause unintentional doping and shift of the E_F position above the conduction band minimum in the AFM topological insulator (TI) MnBi2Te4. This prevents measurements of the quantum anomalous…

The two-dimensional quantum anomalous Hall (QAH) effect is direct evidence of non-trivial Berry curvature topology in condensed matter physics. Searching for QAH in 2D materials, particularly with simplified fabrication methods, poses a…

Mesoscale and Nanoscale Physics · Physics 2024-04-22 Yueh-Ting Yao , Suyang Xu , Tay-Rong Chang

Two-dimensional (2D) group-III-V honeycomb films have attracted significant interest for their potential application in fields of quantum computing and nanoeletronics. Searching for 2D III-V films with high structural stability and…

Materials Science · Physics 2016-03-22 Sheng-shi Li , Wei-xiao Ji , Chang-wen Zhang , Ping Li , Pei-ji Wang
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