Related papers: Wurtzite Boron Nitride as a potential defects host
Layered van der Waals materials are emerging as compelling two-dimensional (2D) platforms for studies of nanophotonics, polaritonics, valleytronics and spintronics, and have the potential to transform applications in sensing, imaging and…
We present an ab-initio study of boron nitride as well as carbon allotropes. Their relative thermodynamic stabilities and structural phase transitions from low- to high-density phases are investigated. Pressure-temperature phase diagrams…
Hexagonal boron nitride (h-BN) is unique among two-dimensional materials, with a large band gap (~6 eV) and high thermal conductivity (>400 W/m/K), second only to diamond among electrical insulators. Most electronic studies to date have…
Boron vacancies (VB${^-}$) in hexagonal boron-nitride (hBN) have sparked great interest in recent years, due to their electronic spin properties. Since hBN can be readily integrated into devices where it interfaces a huge variety of other…
First-principles calculations of substitutional defects and vacancies are performed for zigzag-edged hybrid C/BN nanosheets and nanotubes which recently have been proposed to exhibit half-metallic properties. The formation energies show…
This study explores the properties of nanopowders synthesized under high-temperature, non-equilibrium conditions in a high-flux optical furnace in a nitrogen flow. Boron powders served as the starting material, and the intense thermal…
Optically active spin defects in solids are leading candidates for quantum sensing and quantum networking. Recently, single spin defects were discovered in hexagonal boron nitride (hBN), a layered van der Waals (vdW) material. Due to its…
Hexagonal boron nitride (hBN) is a large band gap layered crystal, frequently incorporated in van der Waals (vdW) heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible…
Quantum enhanced sensing exploits the coherent dynamics of two-level systems (TLSs) to achieve exceptional sensitivities and measurement precision that surpass classical detection limits. While platforms such as nitrogen vacancy centers in…
Experimental synthesis of theoretically predicted materials with controlled elemental coordination environments can lead to realization of useful properties, such as facile ion transport or ferroelectric switching. Among such materials are…
Collective light emission from many-body quantum systems is a cornerstone of quantum optics, yet its implementation in solid-state platforms operating under ambient conditions remains highly challenging. Large-bandgap van der Waals…
Deterministic creation of quantum emitters with high single-photon-purity and excellent indistinguishability is essential for practical applications in quantum information science. Many successful attempts have been carried out in hexagonal…
Low-noise and tunable single-photon sources are essential components of photonic quantum technologies. However, in WSe$_2$ quantum emitters, charge noise from fluctuations in their local electrostatic environment remains a major obstacle to…
The production of high-quality two-dimensional (2D) materials is essential for the ultimate performance of single layers and their hybrids. Hexagonal boron nitride (h-BN) is foreseen to become the key 2D hybrid and packaging material since…
Understanding the collective behavior of the quasiparticles in solid-state systems underpins the field of non-volatile electronics, including the opportunity to control many-body effects for well-desired physical phenomena and their…
Defects in solid-state systems constitute a promising platform for the realization of deterministic quantum emitters. Among many candidate materials and emitters, point defects in hexagonal Boron Nitride (hBN) have recently emerged as…
The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many years of research, remain poorly understood. The key difficulty in the description of the dominant…
Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gap E_g = 6 eV, containing a negatively charged boron vacancy…
Various stacking combinations of the two-dimensional (2D) boron nitride (BN) honeycomb lattice can significantly modify the properties of the resulting 2D BN crystal. Here, we demonstrate through first-principles calculations that the…
Point defect quantum bits in semiconductors have the potential to revolutionize sensing at atomic scales. Currently, vacancy related defects, such as the NV center in diamond and the VB$^-$ in hexagonal boron nitride (hBN), are at the…