Related papers: Simultaneous Charge Carrier Density Mapping of SiC…
While established semiconductor measurement techniques such as four-point probe or capacitance-voltage measurements require a physical contact to the material, terahertz spectroscopy is completely contact-free. Its capability to measure the…
We have developed a single-shot terahertz time-domain spectrometer to perform optical-pump/terahertz-probe experiments in pulsed, high magnetic fields up to 30 T. The single-shot detection scheme for measuring a terahertz waveform…
Silicon carbide (SiC) is a wide bandgap (WBG) semiconductor with promising applications in high-power and high-frequency electronics. Among its many useful properties, the high thermal conductivity is crucial. In this letter, the…
Monolayer epitaxial graphene (EG) grown on hexagonal Si-terminated SiC substrates is intrinsically electron-doped (carrier density is about 10^13 cm^(-2)). We demonstrate a clean device fabrication process using a precious-metal protective…
Time-resolved terahertz time-domain spectroscopy (THz-TDS) is an ideal tool for probing photoinduced nonequilibrium metallic and superconducting states. Here, we focus on the interpretation of the two-dimensional response function…
Due to the increased commercial availability, wide-bandgap semiconductors and their radiation hardness have recently received increased interest from the particle physics community. 4H-Silicon Carbide (SiC), especially, is an attractive…
Using synchronized near-infrared (NIR) and terahertz (THz) lasers, we have performed picosecond time-resolved THz spectroscopy of transient carriers in semiconductors. Specifically, we measured the temporal evolution of THz transmission and…
Terahertz time-domain spectroscopy and scanning probe potentiometry were used to investigate charge trapping in polymer field-effect transistors fabricated on a silicon gate. The hole density in the transistor channel was determined from…
We developed a coherent frequency-domain THz spectroscopic technique on a coplanar waveguide in the ultrabroad frequency range from 200 MHz to 1.6 THz based on continuous wave (CW) laser spectroscopy. Optical beating created by mixing two…
We report on a terahertz time-domain technique for measuring the momentum relaxation time of charge carriers in ultrathin semiconductor layers. The phase sensitive modulation technique directly provides the relaxation time. Time-resolved…
We employ ultra-broadband terahertz-midinfrared probe pulses to characterize the optical response of photoinduced charge-carrier plasmas in high-resistivity silicon in a reflection geometry, over a wide range of excitation densities…
Charge multiplication (CM) in p$^+$n epitaxial silicon pad diodes of 75, 100 and 150 $\upmu$m thickness at high voltages after proton irradiation with 1 MeV neutron equivalent fluences in the order of $10^{16}$ cm$^{-2}$ was studied as an…
Non-destructive testing is an important technique for detecting defects in multi-layer materials, enabling the evaluation of structural integrity without causing damage on test materials. Terahertz time-domain spectroscopy (THz-TDS) offers…
Exciton Mott transition in Si is investigated by using terahertz time-domain spectroscopy. The excitonic correlation as manifested by the 1s-2p resonance is observed above the Mott density. The scattering rate of charge carriers is…
Silicon carbide silicon carbide (SiC SiC) composites are often used in oxidizing environments at high temperatures. Measurements of the thermal conductance of the oxide layer provide a way to better understand the oxidation process with…
We have observed long-lived (~30 ps) coherent oscillations of charge carriers due to cyclotron resonance (CR) in high-mobility two-dimensional electrons in GaAs in perpendicular magnetic fields using time-domain terahertz spectroscopy. The…
Using time-domain terahertz spectroscopy in pulsed magnetic fields up to 31 T, we measure the terahertz optical conductivity in an optimally-doped thin film of the high temperature superconducting cuprate La$_{1.84}$Sr$_{0.16}$CuO$_4$. We…
We demonstrate terahertz (THz) imaging and spectroscopy of a 15x15-mm^2 single-layer graphene film on Si using broadband THz pulses. The THz images clearly map out the THz carrier dynamics of the graphene-on-Si sample, allowing us to…
Silicon carbide detectors exhibit good detection performance and are being considered for detection applications. However, the presence of surface electrode of detector limits the application of low-penetration particle detectors,…
Terahertz properties of mercury telluride (HgTe) films with critical thickness are presented and discussed. The density of the charge carriers is controlled using contact-free optical doping by visible light. In the magneto-optical response…