Related papers: Fully Tunable Strong Spin-Orbit Interactions in Li…
The manipulation of Rashba-type spin-orbit coupling (SOC) in molecular beam epitaxy-grown Al$_x$In$_{1-x}$Sb/InSb/CdTe quantum well heterostructures is reported. The effective band bending provides robust two-dimensional quantum…
CaBi$_2$ is a recently discovered type-I superconductor with $T_c=2$~K and a layered crystal structure. In this work electronic structure, lattice dynamics and electron-phonon interaction are studied, with a special attention paid to the…
We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information -…
Hole spin qubits based on germanium (Ge) have strong tunable spin orbit interaction (SOI) and ultrafast qubit operation speed. Here we report that the Rabi frequency (f_Rabi) of a hole spin qubit in a Ge hut wire (HW) double quantum dot…
Light carries angular momentum as spin and orbital components. The spin-orbit interaction (SOI) of light refers to phenomena in which the spin (left or right circular polarisation) affects the spatial degrees of freedom. Recently, interest…
Spin-orbit interaction (SOI) have provided a new viable roadmap for the development of spin-based photonics devices. However, existing strategies to control the SOI focus commonly on tailoring the spatial dimension of light fields yet…
We investigate the existence of linear-in-momentum spin-orbit interactions in the valence band of Ge/GeSi heterostructures using an atomistic tight-binding method. We show that symmetry breaking at the Ge/GeSi interfaces gives rise to a…
The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice-versa (inverse spin…
We consider a system of weakly coupled Rashba nanowires in the strong spin-orbit interaction (SOI) regime. The nanowires are arranged into two tunnel-coupled layers proximitized by a top and bottom superconductor such that the…
An asymmetric triangular potential well provides the simplest model for the confinement of mobile electrons at the interface between two insulating oxides, such as LaAlO_3 and SrTiO_3 (LAO/STO). These electrons have been recently shown to…
Spin-orbit interaction (SOI) in low-dimensional systems, namely Rashba systems and the edge states of topological materials, is extensively studied in this decade as a promising source to realize various fascinating spintronic phenomena,…
We show that the pair spin-orbit interaction (PSOI) created by the Coulomb fields of interacting electrons leads to the appearance of an unconventional correlated electronic state in two-dimensional materials with the large Rashba effect.…
The theoretical understanding of the spin-orbit coupling (SOC) effects at LaAlO$_{3}$/SrTiO$_{3}$ interfaces and SrTiO$_{3}$ surfaces is still in its infancy. We perform first-principles density-functional-theory calculations and derive…
We study theoretically the low-energy hole states of Ge/Si core/shell nanowires. The low-energy valence band is quasidegenerate, formed by two doublets of different orbital angular momenta, and can be controlled via the relative shell…
Hole spin qubits in planar Ge heterostructures are one of the frontrunner platforms for scalable quantum computers. In these systems, the spin-orbit interactions permit efficient all-electric qubit control. We propose a minimal design…
The broken inversion symmetry at interfaces of complex oxides gives rise to emergent phenomena, including ferromagnetism and Rashba spin-orbit coupling (SOC), which profoundly influence the electronic structure by entangling spin and…
The structure inversion asymmetry at surfaces and interfaces give rise to the Rashba spin-orbit interaction (SOI), that breaks the spin degeneracy of surface or interface states. Hence, when an electric current runs through a surface or…
The introduction of spin-orbit interactions (SOIs) and the subsequent appearance of a two-dimensional (2D) topological phase are crucial for voltage-controlled and zero-emission energy spintronic devices. In contrast, graphene basically…
Due to the recent experimental progress, tunable spin-orbit (SO) interactions represent ideal candidates for the control of polarization and dynamical spin properties in both quantum wells and cold atomic systems. A detailed understanding…
We develop an InAs nanowire gate-all-around field-effect transistor using a transparent conductive zinc oxide (ZnO) gate electrode, which is in-situ atomic layer deposited after growth of gate insulator of Al2O3. We perform…